In this paper, we report the fabrication of a SiN-induced mechanically tensile-strained Si n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) and a compressively strained SiGe p-type MOSFET to improve the drive current of both n-and pMOSFETs simultaneously, and we integrated both devices on the same wafer. Individual MOSFET performance can be adjusted independently to their optimum levels due to the separation process for two types of devices. It is found that n- and pMOSFETs in the novel complementary metal-oxide- semiconductor (CMOS) architecture had a better performance, not only a higher drain-to-source saturation current but also a higher transconductance with wide gate voltage swing, than the Si devices used as a control. Although a degraded performance was found in the pMOSFET with a SiN layer, this effect can be minimized by increasing the Ge content in the Si1-xGex conducting channel, thus demonstrating that the flow has a great flexibility for developing a next-generation high-performance CMOS devices.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - 2007 May 8|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)