Impact of SMT-induced edge dislocation positions to NFET performance

Tzer Min Shen, Shui Jinn Wang, Zhi Ren Xiao, Chung Cheng Wu, Jeff Wu, Carlos H. Diaz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In summary, this work highlights the impact of SMT-induced edge-dislocation positions in nFET device design. Based on experimental results and atomic transport simulation, dislocations with reduced proximity and depth would increase the amount of SFs and TDs which induce high parasitic resistance and high Iboff leakage current together. Trade-off among strained mobility, parasitic resistance and Iboff should be made for advanced device design.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9781467381345
DOIs
Publication statusPublished - 2015 Aug 3
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 2015 Jun 212015 Jun 24

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period15-06-2115-06-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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