@inproceedings{1105de866be64c2b9ccffeabdd1511d4,
title = "Impact of SMT-induced edge dislocation positions to NFET performance",
abstract = "In summary, this work highlights the impact of SMT-induced edge-dislocation positions in nFET device design. Based on experimental results and atomic transport simulation, dislocations with reduced proximity and depth would increase the amount of SFs and TDs which induce high parasitic resistance and high Iboff leakage current together. Trade-off among strained mobility, parasitic resistance and Iboff should be made for advanced device design.",
author = "Shen, {Tzer Min} and Wang, {Shui Jinn} and Xiao, {Zhi Ren} and Wu, {Chung Cheng} and Jeff Wu and Diaz, {Carlos H.}",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175621",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
address = "United States",
note = "73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
}