Impact of SMT-induced edge dislocation positions to NFET performance

Tzer Min Shen, Shui-Jinn Wang, Zhi Ren Xiao, Chung Cheng Wu, Jeff Wu, Carlos H. Diaz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In summary, this work highlights the impact of SMT-induced edge-dislocation positions in nFET device design. Based on experimental results and atomic transport simulation, dislocations with reduced proximity and depth would increase the amount of SFs and TDs which induce high parasitic resistance and high Iboff leakage current together. Trade-off among strained mobility, parasitic resistance and Iboff should be made for advanced device design.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9781467381345
DOIs
Publication statusPublished - 2015 Aug 3
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 2015 Jun 212015 Jun 24

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period15-06-2115-06-24

Fingerprint

Edge dislocations
Surface mount technology
Leakage currents

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Shen, T. M., Wang, S-J., Xiao, Z. R., Wu, C. C., Wu, J., & Diaz, C. H. (2015). Impact of SMT-induced edge dislocation positions to NFET performance. In 73rd Annual Device Research Conference, DRC 2015 [7175621] (Device Research Conference - Conference Digest, DRC; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175621
Shen, Tzer Min ; Wang, Shui-Jinn ; Xiao, Zhi Ren ; Wu, Chung Cheng ; Wu, Jeff ; Diaz, Carlos H. / Impact of SMT-induced edge dislocation positions to NFET performance. 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (Device Research Conference - Conference Digest, DRC).
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author = "Shen, {Tzer Min} and Shui-Jinn Wang and Xiao, {Zhi Ren} and Wu, {Chung Cheng} and Jeff Wu and Diaz, {Carlos H.}",
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Shen, TM, Wang, S-J, Xiao, ZR, Wu, CC, Wu, J & Diaz, CH 2015, Impact of SMT-induced edge dislocation positions to NFET performance. in 73rd Annual Device Research Conference, DRC 2015., 7175621, Device Research Conference - Conference Digest, DRC, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 15-06-21. https://doi.org/10.1109/DRC.2015.7175621

Impact of SMT-induced edge dislocation positions to NFET performance. / Shen, Tzer Min; Wang, Shui-Jinn; Xiao, Zhi Ren; Wu, Chung Cheng; Wu, Jeff; Diaz, Carlos H.

73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7175621 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Shen TM, Wang S-J, Xiao ZR, Wu CC, Wu J, Diaz CH. Impact of SMT-induced edge dislocation positions to NFET performance. In 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7175621. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2015.7175621