Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Cheng Wen Kuo; San Lein Wu; Shoou Jinn Chang; Yao Tsung Huang; Yao Chin Cheng; Osbert Cheng

doi:10.1063/1.3491211

Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Cheng Wen Kuo, San Lein Wu, Shoou Jinn Chang, Yao Tsung Huang, Yao Chin Cheng, Osbert Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter α_H, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.

Original language	English
Article number	123501
Journal	Applied Physics Letters
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.3491211
Publication status	Published - 2010 Sept 20

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3491211

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@article{34694c1c4dc647a98ce8c5f0e67bf8a4,

title = "Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors",

abstract = "The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.",

author = "Kuo, {Cheng Wen} and Wu, {San Lein} and Chang, {Shoou Jinn} and Huang, {Yao Tsung} and Cheng, {Yao Chin} and Osbert Cheng",

note = "Funding Information: This work was supported by National Science Council (NSC) of Taiwan under Contract No. 99-2221-E-230-019. ",

year = "2010",

month = sep,

day = "20",

doi = "10.1063/1.3491211",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

AU - Kuo, Cheng Wen

AU - Wu, San Lein

AU - Chang, Shoou Jinn

AU - Huang, Yao Tsung

AU - Cheng, Yao Chin

AU - Cheng, Osbert

N1 - Funding Information: This work was supported by National Science Council (NSC) of Taiwan under Contract No. 99-2221-E-230-019.

PY - 2010/9/20

Y1 - 2010/9/20

N2 - The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.

AB - The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.

UR - http://www.scopus.com/inward/record.url?scp=77957121358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957121358&partnerID=8YFLogxK

U2 - 10.1063/1.3491211

DO - 10.1063/1.3491211

M3 - Article

AN - SCOPUS:77957121358

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123501

ER -

Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

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