TY - JOUR
T1 - Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates
AU - Yang, Ting Hsin
AU - Su, Chun Jung
AU - Wang, Yu Shun
AU - Kao, Kuo Hsing
AU - Lee, Yao Jen
AU - Wu, Tian Li
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/4/1
Y1 - 2020/4/1
N2 - In this work, polarization-dependent time-dependent dielectric breakdown in ferroelectric HZO Ge MOSCAPs is presented. First, ferroelectric HZO Ge MOSCAPs with and without in-situ NH3 plasma interfacial layer treatment exhibit the two distinct remnant polarization (Pr). Secondly, the device with a larger Pr shows a higher gate leakage current and smaller time-to-breakdown (tBD) compared to the device with a smaller Pr. Then, a physical model based on the high probability of the electron tunneling accelerating the formation of the percolation path is proposed. Finally, the device with large Pr shows a lower extrapolated operating voltage. However, more than 1.5 V of the extracted operation voltage for 1% failure of 10 year lifetime in the device with large Pr still can be obtained.
AB - In this work, polarization-dependent time-dependent dielectric breakdown in ferroelectric HZO Ge MOSCAPs is presented. First, ferroelectric HZO Ge MOSCAPs with and without in-situ NH3 plasma interfacial layer treatment exhibit the two distinct remnant polarization (Pr). Secondly, the device with a larger Pr shows a higher gate leakage current and smaller time-to-breakdown (tBD) compared to the device with a smaller Pr. Then, a physical model based on the high probability of the electron tunneling accelerating the formation of the percolation path is proposed. Finally, the device with large Pr shows a lower extrapolated operating voltage. However, more than 1.5 V of the extracted operation voltage for 1% failure of 10 year lifetime in the device with large Pr still can be obtained.
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U2 - 10.35848/1347-4065/ab6865
DO - 10.35848/1347-4065/ab6865
M3 - Article
AN - SCOPUS:85083290799
VL - 59
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - SG
M1 - SGGB08
ER -