Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates

Ting Hsin Yang, Chun Jung Su, Yu Shun Wang, Kuo Hsing Kao, Yao Jen Lee, Tian Li Wu

Research output: Contribution to journalArticle

Abstract

In this work, polarization-dependent time-dependent dielectric breakdown in ferroelectric HZO Ge MOSCAPs is presented. First, ferroelectric HZO Ge MOSCAPs with and without in-situ NH3 plasma interfacial layer treatment exhibit the two distinct remnant polarization (Pr). Secondly, the device with a larger Pr shows a higher gate leakage current and smaller time-to-breakdown (tBD) compared to the device with a smaller Pr. Then, a physical model based on the high probability of the electron tunneling accelerating the formation of the percolation path is proposed. Finally, the device with large Pr shows a lower extrapolated operating voltage. However, more than 1.5 V of the extracted operation voltage for 1% failure of 10 year lifetime in the device with large Pr still can be obtained.

Original languageEnglish
Article numberSGGB08
JournalJapanese Journal of Applied Physics
Volume59
Issue numberSG
DOIs
Publication statusPublished - 2020 Apr 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> on Ge substrates'. Together they form a unique fingerprint.

  • Cite this