Impact of Zn1-XMnXO on Cu(In,Ga)Se2 thin-film solar cells

Xiaonan Li; Ana Kanevce; Jian V. Li; Ingrid Repins; Brian Egaas; Rommel Noufi

doi:10.1109/PVSC.2009.5411675

Impact of Zn_1-XMn_XO on Cu(In,Ga)Se₂ thin-film solar cells

Xiaonan Li, Ana Kanevce, Jian V. Li, Ingrid Repins, Brian Egaas, Rommel Noufi

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this work, we studied the impact of using Zn_1-xMg _xO to replace the intrinsic ZnO in CIGS solar cells. The effect of Mg content and layer thickness of the Zn_1-xMg_xO on device formation was investigated. We found that the amount of Mg in the Zn _1-xMg_xO layer and the layer thickness significantly alter the cell properties. Device characterization indicated that the impact of the Mg content is not limited to the front-window layer, but also extends to underneath the CIGS layer. The numerical simulation nicely explains the relationship between various front-window layers and device performance. Our observation indicates that properties of the front-window layer may be important to junction formation in CIGS devices. Any changes to this part of the device could seriously alter device performance.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	305-308
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2009.5411675
Publication status	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 2009 Jun 7 → 2009 Jun 12

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	09-06-07 → 09-06-12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2009.5411675

Cite this

@inproceedings{8d2bf9a5da7043f5991253dcb4fd3f80,

title = "Impact of Zn1-XMnXO on Cu(In,Ga)Se2 thin-film solar cells",

abstract = "In this work, we studied the impact of using Zn1-xMg xO to replace the intrinsic ZnO in CIGS solar cells. The effect of Mg content and layer thickness of the Zn1-xMgxO on device formation was investigated. We found that the amount of Mg in the Zn 1-xMgxO layer and the layer thickness significantly alter the cell properties. Device characterization indicated that the impact of the Mg content is not limited to the front-window layer, but also extends to underneath the CIGS layer. The numerical simulation nicely explains the relationship between various front-window layers and device performance. Our observation indicates that properties of the front-window layer may be important to junction formation in CIGS devices. Any changes to this part of the device could seriously alter device performance.",

author = "Xiaonan Li and Ana Kanevce and Li, {Jian V.} and Ingrid Repins and Brian Egaas and Rommel Noufi",

year = "2009",

doi = "10.1109/PVSC.2009.5411675",

language = "English",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "305--308",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Li, X, Kanevce, A, Li, JV, Repins, I, Egaas, B & Noufi, R 2009, Impact of Zn_1-XMn_XO on Cu(In,Ga)Se₂ thin-film solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411675, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 305-308, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 09-06-07. https://doi.org/10.1109/PVSC.2009.5411675

TY - GEN

T1 - Impact of Zn1-XMnXO on Cu(In,Ga)Se2 thin-film solar cells

AU - Li, Xiaonan

AU - Kanevce, Ana

AU - Li, Jian V.

AU - Repins, Ingrid

AU - Egaas, Brian

AU - Noufi, Rommel

PY - 2009

Y1 - 2009

N2 - In this work, we studied the impact of using Zn1-xMg xO to replace the intrinsic ZnO in CIGS solar cells. The effect of Mg content and layer thickness of the Zn1-xMgxO on device formation was investigated. We found that the amount of Mg in the Zn 1-xMgxO layer and the layer thickness significantly alter the cell properties. Device characterization indicated that the impact of the Mg content is not limited to the front-window layer, but also extends to underneath the CIGS layer. The numerical simulation nicely explains the relationship between various front-window layers and device performance. Our observation indicates that properties of the front-window layer may be important to junction formation in CIGS devices. Any changes to this part of the device could seriously alter device performance.

AB - In this work, we studied the impact of using Zn1-xMg xO to replace the intrinsic ZnO in CIGS solar cells. The effect of Mg content and layer thickness of the Zn1-xMgxO on device formation was investigated. We found that the amount of Mg in the Zn 1-xMgxO layer and the layer thickness significantly alter the cell properties. Device characterization indicated that the impact of the Mg content is not limited to the front-window layer, but also extends to underneath the CIGS layer. The numerical simulation nicely explains the relationship between various front-window layers and device performance. Our observation indicates that properties of the front-window layer may be important to junction formation in CIGS devices. Any changes to this part of the device could seriously alter device performance.

UR - http://www.scopus.com/inward/record.url?scp=77951545864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951545864&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2009.5411675

DO - 10.1109/PVSC.2009.5411675

M3 - Conference contribution

AN - SCOPUS:77951545864

SN - 9781424429509

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 305

EP - 308

BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -