Impact of Zn1-XMnXO on Cu(In,Ga)Se2 thin-film solar cells

Xiaonan Li, Ana Kanevce, Jian V. Li, Ingrid Repins, Brian Egaas, Rommel Noufi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this work, we studied the impact of using Zn1-xMg xO to replace the intrinsic ZnO in CIGS solar cells. The effect of Mg content and layer thickness of the Zn1-xMgxO on device formation was investigated. We found that the amount of Mg in the Zn 1-xMgxO layer and the layer thickness significantly alter the cell properties. Device characterization indicated that the impact of the Mg content is not limited to the front-window layer, but also extends to underneath the CIGS layer. The numerical simulation nicely explains the relationship between various front-window layers and device performance. Our observation indicates that properties of the front-window layer may be important to junction formation in CIGS devices. Any changes to this part of the device could seriously alter device performance.

Original languageEnglish
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages305-308
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 2009 Jun 72009 Jun 12

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period09-06-0709-06-12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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