In the development of interconnect architecture for future technologies, LSI has determined that adoption of low-k dielectrics will give higher performance gain as opposed to the replacement of aluminum with copper. The goal is to integrate a robust low-k material for LSI's 0.18 um subtractive aluminum technology with at least 20% capacitance reduction. As a result we have successfully integrated and qualified a flowable carbon doped low-k-film. Dielectric constant ranges from 2.8 to 3.5. We have achieved comparable via resistance performance and 20% to 35% reductions in the line-to-line capacitance compared to the conventional HDP scheme. Greater than 90% system uptime was obtained during the marathon. The process has been released to manufacturing with statistical process control monitoring for the past few months.
|Number of pages||4|
|Journal||IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings|
|Publication status||Published - 2000 Jan 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering