Implementation of a carbon doped low-k material for 0.18 micron technology

Wei Jen Hsia, Wilbur Catabay, Michael Lu, D. C. Perng

Research output: Contribution to journalArticle

Abstract

In the development of interconnect architecture for future technologies, LSI has determined that adoption of low-k dielectrics will give higher performance gain as opposed to the replacement of aluminum with copper. The goal is to integrate a robust low-k material for LSI's 0.18 um subtractive aluminum technology with at least 20% capacitance reduction. As a result we have successfully integrated and qualified a flowable carbon doped low-k-film. Dielectric constant ranges from 2.8 to 3.5. We have achieved comparable via resistance performance and 20% to 35% reductions in the line-to-line capacitance compared to the conventional HDP scheme. Greater than 90% system uptime was obtained during the marathon. The process has been released to manufacturing with statistical process control monitoring for the past few months.

Original languageEnglish
Pages (from-to)403-406
Number of pages4
JournalIEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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