Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Yi Jung Liu; Chien Chang Huang; Tai You Chen; Chi Shiang Hsu; Jian Kai Liou; Tsung Yuan Tsai; Wen Chau Liu

doi:10.1364/OE.19.014662

Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Yi Jung Liu, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Jian Kai Liou, Tsung Yuan Tsai, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

Original language	English
Pages (from-to)	14662-14670
Number of pages	9
Journal	Optics Express
Volume	19
Issue number	15
DOIs	https://doi.org/10.1364/OE.19.014662
Publication status	Published - 2011 Jul 18

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OE.19.014662

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title = "Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode",

abstract = "A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.",

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AU - Liu, Yi Jung

AU - Huang, Chien Chang

AU - Chen, Tai You

AU - Hsu, Chi Shiang

AU - Liou, Jian Kai

AU - Tsai, Tsung Yuan

AU - Liu, Wen Chau

PY - 2011/7/18

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AB - A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

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Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Abstract

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