Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

Chun Yen Chen, Wei Cheng Chen, Ching Hong Chang, Yu Lin Lee, Wen Chau Liu

Research output: Contribution to journalArticle

5 Citations (Scopus)


Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15–90°) and convex or concave sidewalls prepared using an inductively-coupled-plasma approach are comprehensively fabricated and studied. The device with 45° sidewalls (Device F) and that with convex sidewalls (Device B) show significant improvements in optical properties. Experiments show that, at an injection current of 350 mA, the light output power, external quantum efficiency, wall-plug efficiency, and luminous flux of Device F (Device B) are greatly improved by 18.3% (18.2%), 18.2% (18.2%), 17.3% (19.8%), and 16.6% (18.4%), respectively, compared to those of a conventional LED with flat sidewalls. In addition, negligible degradation in electrical properties is found. The enhanced optical performance is mainly attributed to increased light extraction in the horizontal direction due to a significant reduction in total internal reflection at the textured sidewalls. Therefore, the reported specific textured-sidewall structures (Devices B and F) are promising for high-power GaN-based LED applications.

Original languageEnglish
Pages (from-to)172-176
Number of pages5
JournalOptics and Laser Technology
Publication statusPublished - 2018 May


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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