Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

Sachit Grover, David L. Young, Vincenzo Lasalvia, Jian V. Li, Howard M. Branz, Paul Stradins, Charles W. Teplin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10%.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages51-53
Number of pages3
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013 Jan 1
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 2013 Jun 162013 Jun 21

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period13-06-1613-06-21

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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