Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

Sachit Grover; David L. Young; Vincenzo Lasalvia; Jian V. Li; Howard M. Branz; Paul Stradins; Charles W. Teplin

doi:10.1109/PVSC.2013.6744097

Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

Sachit Grover
, David L. Young
, Vincenzo Lasalvia
, Jian V. Li
, Howard M. Branz
, Paul Stradins
, Charles W. Teplin

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V _OC) ∼600 mV and efficiency exceeding 10%.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	51-53
Number of pages	3
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744097
Publication status	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 2013 Jun 16 → 2013 Jun 21

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	13-06-16 → 13-06-21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2013.6744097

Cite this

Grover, S., Young, D. L., Lasalvia, V., Li, J. V., Branz, H. M., Stradins, P., & Teplin, C. W. (2013). Improved 750°C epitaxial crystal silicon solar cells through impurity reduction. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 51-53). Article 6744097 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744097

@inproceedings{4bd42d97758040ebbc4f049ba89cbcc2,

title = "Improved 750°C epitaxial crystal silicon solar cells through impurity reduction",

abstract = "We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10\%.",

author = "Sachit Grover and Young, \{David L.\} and Vincenzo Lasalvia and Li, \{Jian V.\} and Branz, \{Howard M.\} and Paul Stradins and Teplin, \{Charles W.\}",

year = "2013",

doi = "10.1109/PVSC.2013.6744097",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "51--53",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

address = "United States",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Grover, S, Young, DL, Lasalvia, V, Li, JV, Branz, HM, Stradins, P & Teplin, CW 2013, Improved 750°C epitaxial crystal silicon solar cells through impurity reduction. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744097, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 51-53, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 13-06-16. https://doi.org/10.1109/PVSC.2013.6744097

Improved 750°C epitaxial crystal silicon solar cells through impurity reduction. / Grover, Sachit; Young, David L.; Lasalvia, Vincenzo et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 51-53 6744097 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

AU - Grover, Sachit

AU - Young, David L.

AU - Lasalvia, Vincenzo

AU - Li, Jian V.

AU - Branz, Howard M.

AU - Stradins, Paul

AU - Teplin, Charles W.

PY - 2013

Y1 - 2013

N2 - We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10%.

AB - We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10%.

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U2 - 10.1109/PVSC.2013.6744097

DO - 10.1109/PVSC.2013.6744097

M3 - Conference contribution

AN - SCOPUS:84896477847

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 51

EP - 53

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Grover S, Young DL, Lasalvia V, Li JV, Branz HM, Stradins P et al. Improved 750°C epitaxial crystal silicon solar cells through impurity reduction. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 51-53. 6744097. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744097

Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

Abstract

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UN SDGs

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