Improved breakdown in LP-MOCVD grown n+-GaAs/δ(P+)-GalnP/n-GaAs heterojunction camel-gate FET

W. S. Lour, W. L. Chang, S. T. Young, W. C. Liu

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

Fabrication of n+-GaAs/δ(P )-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A δ(P+)-GaInP layer was employed to offer a high valence band, offset as a hole barrier, as well as an enhanced conduction band, offset for good electron confinement. A camel diode using this material structure shows a barrier height > 1.2eV and a very high breakdown voltage of 33 V. The measured transconductance is 140mS/mm with a unity current gain frequency of 17GHz for a 1 × 50μm2 device.

Original languageEnglish
Pages (from-to)814-815
Number of pages2
JournalElectronics Letters
Volume34
Issue number8
DOIs
Publication statusPublished - 1998 Apr 16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Improved breakdown in LP-MOCVD grown n<sup>+</sup>-GaAs/δ(P<sup>+</sup>)-GalnP/n-GaAs heterojunction camel-gate FET'. Together they form a unique fingerprint.

Cite this