Improved breakdown in LP-MOCVD grown n+-GaAs/δ(P+)-GalnP/n-GaAs heterojunction camel-gate FET

W. S. Lour; W. L. Chang; S. T. Young; W. C. Liu

doi:10.1049/el:19980682

Improved breakdown in LP-MOCVD grown n⁺-GaAs/δ(P⁺)-GalnP/n-GaAs heterojunction camel-gate FET

W. S. Lour, W. L. Chang, S. T. Young, W. C. Liu

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Fabrication of n⁺-GaAs/δ(P )-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A δ(P⁺)-GaInP layer was employed to offer a high valence band, offset as a hole barrier, as well as an enhanced conduction band, offset for good electron confinement. A camel diode using this material structure shows a barrier height > 1.2eV and a very high breakdown voltage of 33 V. The measured transconductance is 140mS/mm with a unity current gain frequency of 17GHz for a 1 × 50μm² device.

Original language	English
Pages (from-to)	814-815
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	8
DOIs	https://doi.org/10.1049/el:19980682
Publication status	Published - 1998 Apr 16

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19980682

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title = "Improved breakdown in LP-MOCVD grown n+-GaAs/δ(P+)-GalnP/n-GaAs heterojunction camel-gate FET",

abstract = "Fabrication of n+-GaAs/δ(P )-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A δ(P+)-GaInP layer was employed to offer a high valence band, offset as a hole barrier, as well as an enhanced conduction band, offset for good electron confinement. A camel diode using this material structure shows a barrier height > 1.2eV and a very high breakdown voltage of 33 V. The measured transconductance is 140mS/mm with a unity current gain frequency of 17GHz for a 1 × 50μm2 device.",

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AU - Lour, W. S.

AU - Chang, W. L.

AU - Young, S. T.

AU - Liu, W. C.

PY - 1998/4/16

Y1 - 1998/4/16

N2 - Fabrication of n+-GaAs/δ(P )-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A δ(P+)-GaInP layer was employed to offer a high valence band, offset as a hole barrier, as well as an enhanced conduction band, offset for good electron confinement. A camel diode using this material structure shows a barrier height > 1.2eV and a very high breakdown voltage of 33 V. The measured transconductance is 140mS/mm with a unity current gain frequency of 17GHz for a 1 × 50μm2 device.

AB - Fabrication of n+-GaAs/δ(P )-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A δ(P+)-GaInP layer was employed to offer a high valence band, offset as a hole barrier, as well as an enhanced conduction band, offset for good electron confinement. A camel diode using this material structure shows a barrier height > 1.2eV and a very high breakdown voltage of 33 V. The measured transconductance is 140mS/mm with a unity current gain frequency of 17GHz for a 1 × 50μm2 device.

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Improved breakdown in LP-MOCVD grown n⁺-GaAs/δ(P⁺)-GalnP/n-GaAs heterojunction camel-gate FET

Abstract

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