Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan Wei Lee; Nan Ying Yang; Mau Phon Houng; Yeong Her Wang; Po Wen Sze

doi:10.1063/1.2151252

Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan Wei Lee, Nan Ying Yang, Mau Phon Houng, Yeong Her Wang, Po Wen Sze

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.

Original language	English
Article number	263501
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	26
DOIs	https://doi.org/10.1063/1.2151252
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2151252

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title = "Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate",

abstract = "The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.",

author = "Lee, {Kuan Wei} and Yang, {Nan Ying} and Houng, {Mau Phon} and Wang, {Yeong Her} and Sze, {Po Wen}",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan under Contracts No. NSC 93-2120-M-007-007, NSC 93-2215-E-006-003, NSC 92-2215-E-006-008, and MOE Program for Promoting Academic Excellence of Universities under the Grant No. A-91E-FA08-1-4.",

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doi = "10.1063/1.2151252",

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journal = "Applied Physics Letters",

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T1 - Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

AU - Lee, Kuan Wei

AU - Yang, Nan Ying

AU - Houng, Mau Phon

AU - Wang, Yeong Her

AU - Sze, Po Wen

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan under Contracts No. NSC 93-2120-M-007-007, NSC 93-2215-E-006-003, NSC 92-2215-E-006-008, and MOE Program for Promoting Academic Excellence of Universities under the Grant No. A-91E-FA08-1-4.

PY - 2005

Y1 - 2005

N2 - The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.

AB - The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.

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Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

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