Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan Wei Lee, Nan Ying Yang, Mau Phon Houng, Yeong Her Wang, Po Wen Sze

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.

Original languageEnglish
Article number263501
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number26
DOIs
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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