Improved characteristics of formal-passivated pseudomorphic high electron mobility transistor

P. H. Lai, S. I. Fu, Y. Y. Tsai, C. W. Hung, T. P. Chen, Wen-Chau Liu

Research output: Contribution to journalArticle

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Abstract

Temperature-dependent characteristics of a formal-passivated pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Experimentally, for the PHEMT's operation, significant improvements of f T, fmax, gm and IDS operating regime are found after formal passivation. In addition, remarkably lower temperature variation coefficients on Von (-1.33mV/K), BVGD (-65.6mV/K), ΦB (-0.321meV/K) and n (3.88×10 -4/K) are observed as temperature is increased from 300 to 480K. Under an accelerated stress test, this formal-passivated device also shows improved reliability performance.

Original languageEnglish
Pages (from-to)54-56
Number of pages3
JournalElectronics Letters
Volume43
Issue number1
DOIs
Publication statusPublished - 2007 Jan 22

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High electron mobility transistors
Passivation
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lai, P. H. ; Fu, S. I. ; Tsai, Y. Y. ; Hung, C. W. ; Chen, T. P. ; Liu, Wen-Chau. / Improved characteristics of formal-passivated pseudomorphic high electron mobility transistor. In: Electronics Letters. 2007 ; Vol. 43, No. 1. pp. 54-56.
@article{2ad5fe16bac54376bdfc04ec06dcdcdf,
title = "Improved characteristics of formal-passivated pseudomorphic high electron mobility transistor",
abstract = "Temperature-dependent characteristics of a formal-passivated pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Experimentally, for the PHEMT's operation, significant improvements of f T, fmax, gm and IDS operating regime are found after formal passivation. In addition, remarkably lower temperature variation coefficients on Von (-1.33mV/K), BVGD (-65.6mV/K), ΦB (-0.321meV/K) and n (3.88×10 -4/K) are observed as temperature is increased from 300 to 480K. Under an accelerated stress test, this formal-passivated device also shows improved reliability performance.",
author = "Lai, {P. H.} and Fu, {S. I.} and Tsai, {Y. Y.} and Hung, {C. W.} and Chen, {T. P.} and Wen-Chau Liu",
year = "2007",
month = "1",
day = "22",
doi = "10.1049/el:20073370",
language = "English",
volume = "43",
pages = "54--56",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "1",

}

Improved characteristics of formal-passivated pseudomorphic high electron mobility transistor. / Lai, P. H.; Fu, S. I.; Tsai, Y. Y.; Hung, C. W.; Chen, T. P.; Liu, Wen-Chau.

In: Electronics Letters, Vol. 43, No. 1, 22.01.2007, p. 54-56.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved characteristics of formal-passivated pseudomorphic high electron mobility transistor

AU - Lai, P. H.

AU - Fu, S. I.

AU - Tsai, Y. Y.

AU - Hung, C. W.

AU - Chen, T. P.

AU - Liu, Wen-Chau

PY - 2007/1/22

Y1 - 2007/1/22

N2 - Temperature-dependent characteristics of a formal-passivated pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Experimentally, for the PHEMT's operation, significant improvements of f T, fmax, gm and IDS operating regime are found after formal passivation. In addition, remarkably lower temperature variation coefficients on Von (-1.33mV/K), BVGD (-65.6mV/K), ΦB (-0.321meV/K) and n (3.88×10 -4/K) are observed as temperature is increased from 300 to 480K. Under an accelerated stress test, this formal-passivated device also shows improved reliability performance.

AB - Temperature-dependent characteristics of a formal-passivated pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Experimentally, for the PHEMT's operation, significant improvements of f T, fmax, gm and IDS operating regime are found after formal passivation. In addition, remarkably lower temperature variation coefficients on Von (-1.33mV/K), BVGD (-65.6mV/K), ΦB (-0.321meV/K) and n (3.88×10 -4/K) are observed as temperature is increased from 300 to 480K. Under an accelerated stress test, this formal-passivated device also shows improved reliability performance.

UR - http://www.scopus.com/inward/record.url?scp=33846200011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846200011&partnerID=8YFLogxK

U2 - 10.1049/el:20073370

DO - 10.1049/el:20073370

M3 - Article

VL - 43

SP - 54

EP - 56

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -