The metamorphic structure of InAlAs/InGaAs high electron mobility transistor (HEMT) with symmetric graded InxGa1-xAs channel was discussed. The improved electron mobility of 9500 (30 600) cm2/V s at 300 (77) K was achieved due to the lower interface roughness scattering. It was found that the measured current gain cutoff frequency fT amd maximum oscillation frequency fmax for a 1.5μm gate device were 18.9 and 48.4 GHz. The results show that the structure was used for the high power, high frequency and low noise device applications.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 Sep 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering