Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded inxGa1-xAs channel

Yih Juan Li, Wei Chou Hsu, I. Liang Chen, Ching Sung Lee, Yeong Jia Chen, Ikai Lo

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The metamorphic structure of InAlAs/InGaAs high electron mobility transistor (HEMT) with symmetric graded InxGa1-xAs channel was discussed. The improved electron mobility of 9500 (30 600) cm2/V s at 300 (77) K was achieved due to the lower interface roughness scattering. It was found that the measured current gain cutoff frequency fT amd maximum oscillation frequency fmax for a 1.5μm gate device were 18.9 and 48.4 GHz. The results show that the structure was used for the high power, high frequency and low noise device applications.

Original languageEnglish
Pages (from-to)2429-2433
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number5
DOIs
Publication statusPublished - 2004 Sep 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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