Abstract
The metamorphic structure of InAlAs/InGaAs high electron mobility transistor (HEMT) with symmetric graded InxGa1-xAs channel was discussed. The improved electron mobility of 9500 (30 600) cm2/V s at 300 (77) K was achieved due to the lower interface roughness scattering. It was found that the measured current gain cutoff frequency fT amd maximum oscillation frequency fmax for a 1.5μm gate device were 18.9 and 48.4 GHz. The results show that the structure was used for the high power, high frequency and low noise device applications.
Original language | English |
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Pages (from-to) | 2429-2433 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 22 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2004 Sept |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering