Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer

Jian Kai Liou; Chun Chia Chen; Po Cheng Chou; Tsung Yuan Tsai; Shiou Ying Cheng; Wen Chau Liu

doi:10.1016/j.sse.2014.05.002

Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer

Jian Kai Liou, Chun Chia Chen, Po Cheng Chou, Tsung Yuan Tsai, Shiou Ying Cheng, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A GaN-based light-emitting diode (LED) with a stair-like ITO layer is studied. The stair-like ITO structure is achieved by using a simple wet etching process. The current distribution could be adjusted by the different thickness of each step in this stair-like ITO layer. The current injected from p-pad is forced to be spread outside by the thicker ITO layer below the p-pad, which exhibits larger parasitic series resistance, instead of flowing downward directly. The current spreading effect could be enhanced. As compared with a conventional LED, at 20 mA, the studied device with a stair-like ITO layer shows 13.8% improvement in light output power. A lower turn-on voltage is also achieved.

Original language	English
Pages (from-to)	21-24
Number of pages	4
Journal	Solid-State Electronics
Volume	99
DOIs	https://doi.org/10.1016/j.sse.2014.05.002
Publication status	Published - 2014 Sep

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2014.05.002

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title = "Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer",

abstract = "A GaN-based light-emitting diode (LED) with a stair-like ITO layer is studied. The stair-like ITO structure is achieved by using a simple wet etching process. The current distribution could be adjusted by the different thickness of each step in this stair-like ITO layer. The current injected from p-pad is forced to be spread outside by the thicker ITO layer below the p-pad, which exhibits larger parasitic series resistance, instead of flowing downward directly. The current spreading effect could be enhanced. As compared with a conventional LED, at 20 mA, the studied device with a stair-like ITO layer shows 13.8% improvement in light output power. A lower turn-on voltage is also achieved.",

author = "Liou, {Jian Kai} and Chen, {Chun Chia} and Chou, {Po Cheng} and Tsai, {Tsung Yuan} and Cheng, {Shiou Ying} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the Ministry of Science and Technology of the Republic of China under Contract Nos. NSC-100-2221-E-006-044-MY3 , NSC-101-2221-E-006-142-MY3 , and NSC-102-2221-E-197-032 .",

year = "2014",

month = sep,

doi = "10.1016/j.sse.2014.05.002",

language = "English",

volume = "99",

pages = "21--24",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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T1 - Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer

AU - Liou, Jian Kai

AU - Chen, Chun Chia

AU - Chou, Po Cheng

AU - Tsai, Tsung Yuan

AU - Cheng, Shiou Ying

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the Ministry of Science and Technology of the Republic of China under Contract Nos. NSC-100-2221-E-006-044-MY3 , NSC-101-2221-E-006-142-MY3 , and NSC-102-2221-E-197-032 .

PY - 2014/9

Y1 - 2014/9

N2 - A GaN-based light-emitting diode (LED) with a stair-like ITO layer is studied. The stair-like ITO structure is achieved by using a simple wet etching process. The current distribution could be adjusted by the different thickness of each step in this stair-like ITO layer. The current injected from p-pad is forced to be spread outside by the thicker ITO layer below the p-pad, which exhibits larger parasitic series resistance, instead of flowing downward directly. The current spreading effect could be enhanced. As compared with a conventional LED, at 20 mA, the studied device with a stair-like ITO layer shows 13.8% improvement in light output power. A lower turn-on voltage is also achieved.

AB - A GaN-based light-emitting diode (LED) with a stair-like ITO layer is studied. The stair-like ITO structure is achieved by using a simple wet etching process. The current distribution could be adjusted by the different thickness of each step in this stair-like ITO layer. The current injected from p-pad is forced to be spread outside by the thicker ITO layer below the p-pad, which exhibits larger parasitic series resistance, instead of flowing downward directly. The current spreading effect could be enhanced. As compared with a conventional LED, at 20 mA, the studied device with a stair-like ITO layer shows 13.8% improvement in light output power. A lower turn-on voltage is also achieved.

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JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -

Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer

Abstract

All Science Journal Classification (ASJC) codes

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