Abstract
A GaN-based light-emitting diode (LED) with a stair-like ITO layer is studied. The stair-like ITO structure is achieved by using a simple wet etching process. The current distribution could be adjusted by the different thickness of each step in this stair-like ITO layer. The current injected from p-pad is forced to be spread outside by the thicker ITO layer below the p-pad, which exhibits larger parasitic series resistance, instead of flowing downward directly. The current spreading effect could be enhanced. As compared with a conventional LED, at 20 mA, the studied device with a stair-like ITO layer shows 13.8% improvement in light output power. A lower turn-on voltage is also achieved.
Original language | English |
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Pages (from-to) | 21-24 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 99 |
DOIs | |
Publication status | Published - 2014 Sep |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry