Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction

Yi Jung Liu; Der Feng Guo; Kuei Yi Chu; Shiou Ying Cheng; Jian Kai Liou; Li Yang Chen; Tsung Han Tsai; Chien Chang Huang; Tai You Chen; Chi Shiang Hsu; Tsung Yuan Tsai; Wen Chau Liu

doi:10.1016/j.displa.2011.04.004

Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction

Yi Jung Liu, Der Feng Guo, Kuei Yi Chu, Shiou Ying Cheng, Jian Kai Liou, Li Yang Chen, Tsung Han Tsai, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Tsung Yuan Tsai, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The InGaN-based light-emitting diode (LED) with a clear p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of current crowding phenomenon yields the reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors including lower turn-on voltage, lower parasitic series resistance, and significantly enhanced electrostatic discharge (ESD) performance are presented.

Original language	English
Pages (from-to)	330-333
Number of pages	4
Journal	Displays
Volume	32
Issue number	5
DOIs	https://doi.org/10.1016/j.displa.2011.04.004
Publication status	Published - 2011 Dec

All Science Journal Classification (ASJC) codes

Human-Computer Interaction
Hardware and Architecture
Electrical and Electronic Engineering

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10.1016/j.displa.2011.04.004

Cite this

@article{67876223495e4471b230414d1b59bafc,

title = "Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction",

abstract = "The InGaN-based light-emitting diode (LED) with a clear p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of current crowding phenomenon yields the reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors including lower turn-on voltage, lower parasitic series resistance, and significantly enhanced electrostatic discharge (ESD) performance are presented.",

author = "Liu, {Yi Jung} and Guo, {Der Feng} and Chu, {Kuei Yi} and Cheng, {Shiou Ying} and Liou, {Jian Kai} and Chen, {Li Yang} and Tsai, {Tsung Han} and Huang, {Chien Chang} and Chen, {Tai You} and Hsu, {Chi Shiang} and Tsai, {Tsung Yuan} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-97-2221-E-006-238-MY3. ",

year = "2011",

month = dec,

doi = "10.1016/j.displa.2011.04.004",

language = "English",

volume = "32",

pages = "330--333",

journal = "Displays",

issn = "0141-9382",

publisher = "Elsevier BV",

number = "5",

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TY - JOUR

T1 - Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction

AU - Liu, Yi Jung

AU - Guo, Der Feng

AU - Chu, Kuei Yi

AU - Cheng, Shiou Ying

AU - Liou, Jian Kai

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Huang, Chien Chang

AU - Chen, Tai You

AU - Hsu, Chi Shiang

AU - Tsai, Tsung Yuan

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-97-2221-E-006-238-MY3.

PY - 2011/12

Y1 - 2011/12

N2 - The InGaN-based light-emitting diode (LED) with a clear p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of current crowding phenomenon yields the reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors including lower turn-on voltage, lower parasitic series resistance, and significantly enhanced electrostatic discharge (ESD) performance are presented.

AB - The InGaN-based light-emitting diode (LED) with a clear p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of current crowding phenomenon yields the reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors including lower turn-on voltage, lower parasitic series resistance, and significantly enhanced electrostatic discharge (ESD) performance are presented.

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UR - http://www.scopus.com/inward/citedby.url?scp=80255131271&partnerID=8YFLogxK

U2 - 10.1016/j.displa.2011.04.004

DO - 10.1016/j.displa.2011.04.004

M3 - Article

AN - SCOPUS:80255131271

SN - 0141-9382

VL - 32

SP - 330

EP - 333

JO - Displays

JF - Displays

IS - 5

ER -

Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction

Abstract

All Science Journal Classification (ASJC) codes

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