Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction

Yi Jung Liu, Der Feng Guo, Kuei Yi Chu, Shiou Ying Cheng, Jian Kai Liou, Li Yang Chen, Tsung Han Tsai, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Tsung Yuan Tsai, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The InGaN-based light-emitting diode (LED) with a clear p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of current crowding phenomenon yields the reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors including lower turn-on voltage, lower parasitic series resistance, and significantly enhanced electrostatic discharge (ESD) performance are presented.

Original languageEnglish
Pages (from-to)330-333
Number of pages4
JournalDisplays
Volume32
Issue number5
DOIs
Publication statusPublished - 2011 Dec

All Science Journal Classification (ASJC) codes

  • Human-Computer Interaction
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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