An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering