Abstract
An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.
Original language | English |
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Pages (from-to) | 539-542 |
Number of pages | 4 |
Journal | IEICE Transactions on Electronics |
Volume | E90-C |
Issue number | 2 |
DOIs | |
Publication status | Published - 2007 Feb |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering