Improved design of thermal-via structures and circuit parameters for advanced collector-up HBTs as miniature high-power amplifiers

Hsien Cheng Tseng; Pei Hsuan Lee; Jung Hua Chou

doi:10.1093/ietele/e90-c.2.539

Improved design of thermal-via structures and circuit parameters for advanced collector-up HBTs as miniature high-power amplifiers

Hsien Cheng Tseng, Pei Hsuan Lee, Jung Hua Chou

Department of Engineering Science

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.

Original language	English
Pages (from-to)	539-542
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E90-C
Issue number	2
DOIs	https://doi.org/10.1093/ietele/e90-c.2.539
Publication status	Published - 2007 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.",

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N2 - An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.

AB - An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.

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Improved design of thermal-via structures and circuit parameters for advanced collector-up HBTs as miniature high-power amplifiers

Abstract

All Science Journal Classification (ASJC) codes

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