Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode

Jheng Tai Yan; Ching Ting Lee

doi:10.1016/j.snb.2009.08.040

Improved detection sensitivity of Pt/β-Ga₂O₃/GaN hydrogen sensor diode

Jheng Tai Yan, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

The hydrogen sensing characteristics of Pt/GaN (metal/semiconductor, MS) type and Pt/β-Ga₂O₃/GaN (metal/reactive insulator/semiconductor, MIS) type hydrogen sensor diodes under hydrogen containing ambience were measured at room temperature. The MIS-type sensor diodes were fabricated in which the β-Ga₂O₃ oxide layers were directly grown on GaN layer using a photoelectrochemical oxidation method and then annealed in O₂ ambience at 700 °C for 2 h. The Pt/β-Ga₂O₃/GaN sensors exhibited high hydrogen sensing ability. The experimental results demonstrated that the β-Ga₂O₃ layer played an important role in the MIS-type hydrogen sensor diodes.

Original language	English
Pages (from-to)	192-197
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	143
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2009.08.040
Publication status	Published - 2009 Dec 4

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.snb.2009.08.040

Fingerprint Dive into the research topics of 'Improved detection sensitivity of Pt/β-Ga<sub>2</sub>O<sub>3</sub>/GaN hydrogen sensor diode'. Together they form a unique fingerprint.

Cite this

@article{b0858fbc8a9e4ac8ba56d65ea3c9fe51,

title = "Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode",

abstract = "The hydrogen sensing characteristics of Pt/GaN (metal/semiconductor, MS) type and Pt/β-Ga2O3/GaN (metal/reactive insulator/semiconductor, MIS) type hydrogen sensor diodes under hydrogen containing ambience were measured at room temperature. The MIS-type sensor diodes were fabricated in which the β-Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical oxidation method and then annealed in O2 ambience at 700 °C for 2 h. The Pt/β-Ga2O3/GaN sensors exhibited high hydrogen sensing ability. The experimental results demonstrated that the β-Ga2O3 layer played an important role in the MIS-type hydrogen sensor diodes.",

author = "Yan, {Jheng Tai} and Lee, {Ching Ting}",

year = "2009",

month = dec,

day = "4",

doi = "10.1016/j.snb.2009.08.040",

language = "English",

volume = "143",

pages = "192--197",

journal = "Sensors and Actuators, B: Chemical",

issn = "0925-4005",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode

AU - Yan, Jheng Tai

AU - Lee, Ching Ting

PY - 2009/12/4

Y1 - 2009/12/4

N2 - The hydrogen sensing characteristics of Pt/GaN (metal/semiconductor, MS) type and Pt/β-Ga2O3/GaN (metal/reactive insulator/semiconductor, MIS) type hydrogen sensor diodes under hydrogen containing ambience were measured at room temperature. The MIS-type sensor diodes were fabricated in which the β-Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical oxidation method and then annealed in O2 ambience at 700 °C for 2 h. The Pt/β-Ga2O3/GaN sensors exhibited high hydrogen sensing ability. The experimental results demonstrated that the β-Ga2O3 layer played an important role in the MIS-type hydrogen sensor diodes.

AB - The hydrogen sensing characteristics of Pt/GaN (metal/semiconductor, MS) type and Pt/β-Ga2O3/GaN (metal/reactive insulator/semiconductor, MIS) type hydrogen sensor diodes under hydrogen containing ambience were measured at room temperature. The MIS-type sensor diodes were fabricated in which the β-Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical oxidation method and then annealed in O2 ambience at 700 °C for 2 h. The Pt/β-Ga2O3/GaN sensors exhibited high hydrogen sensing ability. The experimental results demonstrated that the β-Ga2O3 layer played an important role in the MIS-type hydrogen sensor diodes.

UR - http://www.scopus.com/inward/record.url?scp=71849094329&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71849094329&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2009.08.040

DO - 10.1016/j.snb.2009.08.040

M3 - Article

AN - SCOPUS:71849094329

VL - 143

SP - 192

EP - 197

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1

ER -