TY - JOUR
T1 - Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode
AU - Yan, Jheng Tai
AU - Lee, Ching Ting
N1 - Funding Information:
Ching-Ting Lee was born in Taoyuan, Taiwan, Republic of China, on November 1, 1949. He received his B.S. and M.S. degree in Electrical Engineering Department of the National Cheng Kung University, Taiwan, in 1972 and 1974, respectively. He received PhD degree in Electrical Engineering Department from the Carnegie-Mellon University, Pittsburgh, PA, in 1982. He worked on Chung Shan Institute of Science and Technology, before he joined the Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, as a professor in 1990. He works in National Cheng Kung University as the dean of the college of Electrical Engineering and Computer Science and the professor of the Institute of Microelectronics, Department of Electrical Engineering in 2003. Among the awards and honors he has received are Fellow of IEEE, the outstanding Research Professor Fellowship from the National Science Council (NSC), Republic of China, distinguish service award from Institute of Electrical Engineering Society, the Optical Engineering Medal from Optical Engineering Society and Distinguish Electrical Engineering professor award from Chinese Institute of Electrical Engineering Society. He is the distinguished research professor of National Cheng Kung University. His current research interests include nanomaterials and devices, light emission of Si nanoclusters, nanostructure of solar cells, GaN-based light-emitting diodes and lasers, GaN-based field effect transistors. His research activities have also involved in the research concerning III–V semiconductor lasers, photodetectors and high-speed electronic devices, and their associated integration for electrooptical integrated circuits.
PY - 2009/12/4
Y1 - 2009/12/4
N2 - The hydrogen sensing characteristics of Pt/GaN (metal/semiconductor, MS) type and Pt/β-Ga2O3/GaN (metal/reactive insulator/semiconductor, MIS) type hydrogen sensor diodes under hydrogen containing ambience were measured at room temperature. The MIS-type sensor diodes were fabricated in which the β-Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical oxidation method and then annealed in O2 ambience at 700 °C for 2 h. The Pt/β-Ga2O3/GaN sensors exhibited high hydrogen sensing ability. The experimental results demonstrated that the β-Ga2O3 layer played an important role in the MIS-type hydrogen sensor diodes.
AB - The hydrogen sensing characteristics of Pt/GaN (metal/semiconductor, MS) type and Pt/β-Ga2O3/GaN (metal/reactive insulator/semiconductor, MIS) type hydrogen sensor diodes under hydrogen containing ambience were measured at room temperature. The MIS-type sensor diodes were fabricated in which the β-Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical oxidation method and then annealed in O2 ambience at 700 °C for 2 h. The Pt/β-Ga2O3/GaN sensors exhibited high hydrogen sensing ability. The experimental results demonstrated that the β-Ga2O3 layer played an important role in the MIS-type hydrogen sensor diodes.
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U2 - 10.1016/j.snb.2009.08.040
DO - 10.1016/j.snb.2009.08.040
M3 - Article
AN - SCOPUS:71849094329
VL - 143
SP - 192
EP - 197
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
SN - 0925-4005
IS - 1
ER -