Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel

Y. J. Li, H. M. Shieh, J. S. Su, M. J. Kao, Wei-Chou Hsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Improved delta-doped (δ-doped) InGaAs/GaAs field-effect transistors by grading both sides of the InGaAs channel are grown by metal-organic chemical vapor deposition. With the In composition linearly varied from x = 0.18 at the GaAs/InGaAs heterointerface to x = 0.25 at center of the InGaAs channel, significantly enhanced mobility due to reduced scattering is achieved when compared to that without graded heterostructure. A distinguishable two-dimensional electron gas from Shubnikow-de Hass (SdH) measurement is observed. Meanwhile, an improved extrinsic transconductance of 300 mS/mm with gate length of 1.2 μm is obtained.

Original languageEnglish
Pages (from-to)266-269
Number of pages4
JournalMaterials Chemistry and Physics
Volume61
Issue number3
DOIs
Publication statusPublished - 1999 Nov 1

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Two dimensional electron gas
Organic chemicals
Transconductance
Field effect transistors
Heterojunctions
Chemical vapor deposition
Scattering
Organic Chemicals
transconductance
Metals
Chemical analysis
metalorganic chemical vapor deposition
electron gas
field effect transistors
scattering
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Li, Y. J. ; Shieh, H. M. ; Su, J. S. ; Kao, M. J. ; Hsu, Wei-Chou. / Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel. In: Materials Chemistry and Physics. 1999 ; Vol. 61, No. 3. pp. 266-269.
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Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel. / Li, Y. J.; Shieh, H. M.; Su, J. S.; Kao, M. J.; Hsu, Wei-Chou.

In: Materials Chemistry and Physics, Vol. 61, No. 3, 01.11.1999, p. 266-269.

Research output: Contribution to journalArticle

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AU - Li, Y. J.

AU - Shieh, H. M.

AU - Su, J. S.

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