Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel

Y. J. Li; H. M. Shieh; J. S. Su; M. J. Kao; W. C. Hsu

doi:10.1016/S0254-0584(99)00146-7

Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel

Y. J. Li
, H. M. Shieh
, J. S. Su
, M. J. Kao
, W. C. Hsu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Improved delta-doped (δ-doped) InGaAs/GaAs field-effect transistors by grading both sides of the InGaAs channel are grown by metal-organic chemical vapor deposition. With the In composition linearly varied from x = 0.18 at the GaAs/InGaAs heterointerface to x = 0.25 at center of the InGaAs channel, significantly enhanced mobility due to reduced scattering is achieved when compared to that without graded heterostructure. A distinguishable two-dimensional electron gas from Shubnikow-de Hass (SdH) measurement is observed. Meanwhile, an improved extrinsic transconductance of 300 mS/mm with gate length of 1.2 μm is obtained.

Original language	English
Pages (from-to)	266-269
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	61
Issue number	3
DOIs	https://doi.org/10.1016/S0254-0584(99)00146-7
Publication status	Published - 1999 Nov 1

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/S0254-0584(99)00146-7

Cite this

@article{ec21759f161647f2970029e432ad686b,

title = "Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel",

abstract = "Improved delta-doped (δ-doped) InGaAs/GaAs field-effect transistors by grading both sides of the InGaAs channel are grown by metal-organic chemical vapor deposition. With the In composition linearly varied from x = 0.18 at the GaAs/InGaAs heterointerface to x = 0.25 at center of the InGaAs channel, significantly enhanced mobility due to reduced scattering is achieved when compared to that without graded heterostructure. A distinguishable two-dimensional electron gas from Shubnikow-de Hass (SdH) measurement is observed. Meanwhile, an improved extrinsic transconductance of 300 mS/mm with gate length of 1.2 μm is obtained.",

author = "Li, \{Y. J.\} and Shieh, \{H. M.\} and Su, \{J. S.\} and Kao, \{M. J.\} and Hsu, \{W. C.\}",

note = "Funding Information: The author would like to thank Dr. Ikai Lo, National Sun Yat Sen University, for his kind assistance on the SdH measurements. This work was supported by the National Science Council under Contract No. NSC 88-2215-E-006-011.",

year = "1999",

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doi = "10.1016/S0254-0584(99)00146-7",

language = "English",

volume = "61",

pages = "266--269",

journal = "Materials Chemistry and Physics",

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publisher = "Elsevier BV",

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TY - JOUR

T1 - Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel

AU - Li, Y. J.

AU - Shieh, H. M.

AU - Su, J. S.

AU - Kao, M. J.

AU - Hsu, W. C.

N1 - Funding Information: The author would like to thank Dr. Ikai Lo, National Sun Yat Sen University, for his kind assistance on the SdH measurements. This work was supported by the National Science Council under Contract No. NSC 88-2215-E-006-011.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - Improved delta-doped (δ-doped) InGaAs/GaAs field-effect transistors by grading both sides of the InGaAs channel are grown by metal-organic chemical vapor deposition. With the In composition linearly varied from x = 0.18 at the GaAs/InGaAs heterointerface to x = 0.25 at center of the InGaAs channel, significantly enhanced mobility due to reduced scattering is achieved when compared to that without graded heterostructure. A distinguishable two-dimensional electron gas from Shubnikow-de Hass (SdH) measurement is observed. Meanwhile, an improved extrinsic transconductance of 300 mS/mm with gate length of 1.2 μm is obtained.

AB - Improved delta-doped (δ-doped) InGaAs/GaAs field-effect transistors by grading both sides of the InGaAs channel are grown by metal-organic chemical vapor deposition. With the In composition linearly varied from x = 0.18 at the GaAs/InGaAs heterointerface to x = 0.25 at center of the InGaAs channel, significantly enhanced mobility due to reduced scattering is achieved when compared to that without graded heterostructure. A distinguishable two-dimensional electron gas from Shubnikow-de Hass (SdH) measurement is observed. Meanwhile, an improved extrinsic transconductance of 300 mS/mm with gate length of 1.2 μm is obtained.

UR - https://www.scopus.com/pages/publications/0033224284

UR - https://www.scopus.com/pages/publications/0033224284#tab=citedBy

U2 - 10.1016/S0254-0584(99)00146-7

DO - 10.1016/S0254-0584(99)00146-7

M3 - Article

AN - SCOPUS:0033224284

SN - 0254-0584

VL - 61

SP - 266

EP - 269

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 3

ER -

Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel

Abstract

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