Improved electrical and thermal stability of solution-processed Li-doped ZnO thin-film transistors

Bo Yuan Su, Sheng Yuan Chu, Yung Der Juang

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


The effects of lithium (Li) doping on the performance of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. Li-doped ZnO films as channel layers are chemically prepared by spin coating the gel with an aqueous solution of zinc acetate dihydrate, Li nitrate, and ethanolamine. TFT devices fabricated with 2 at.% Li-doped films show a good field-effect mobility of 3.31 cm 2/V·s, a subthreshold slope of 0.82 V/dec, and an on-off current ratio of over 10 5. These TFT devices also show good thermal and electrical stability, which is mainly attributed to the compact surface morphology of the channel layer, small carrier concentration, and less oxygen deficiency, which reduces the interface electrical trapping at the gate insulator.

Original languageEnglish
Article number6129494
Pages (from-to)700-704
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 2012 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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