Improved electrical performance of organic thin-film transistors with modified high-K dielectrics

Fu Chiao Wu, Bo Liang Yeh, Tzu Hsiu Chou, Jen-Sue Chen, Min Ruei Tsai, Horng-Long Cheng, Wei-Yang Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages183-186
Number of pages4
ISBN (Electronic)9784990875336
Publication statusPublished - 2017 Aug 8
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: 2017 Jul 42017 Jul 7

Publication series

NameAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Other

Other24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
CountryJapan
CityKyoto
Period17-07-0417-07-07

Fingerprint

Thin film transistors
Polyimides
Hafnium
Surface tension
Permittivity
Microstructure
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computational Theory and Mathematics

Cite this

Wu, F. C., Yeh, B. L., Chou, T. H., Chen, J-S., Tsai, M. R., Cheng, H-L., & Chou, W-Y. (2017). Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings (pp. 183-186). [8006115] (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc..
Wu, Fu Chiao ; Yeh, Bo Liang ; Chou, Tzu Hsiu ; Chen, Jen-Sue ; Tsai, Min Ruei ; Cheng, Horng-Long ; Chou, Wei-Yang. / Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 183-186 (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
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title = "Improved electrical performance of organic thin-film transistors with modified high-K dielectrics",
abstract = "We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.",
author = "Wu, {Fu Chiao} and Yeh, {Bo Liang} and Chou, {Tzu Hsiu} and Jen-Sue Chen and Tsai, {Min Ruei} and Horng-Long Cheng and Wei-Yang Chou",
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Wu, FC, Yeh, BL, Chou, TH, Chen, J-S, Tsai, MR, Cheng, H-L & Chou, W-Y 2017, Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. in AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8006115, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 183-186, 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017, Kyoto, Japan, 17-07-04.

Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. / Wu, Fu Chiao; Yeh, Bo Liang; Chou, Tzu Hsiu; Chen, Jen-Sue; Tsai, Min Ruei; Cheng, Horng-Long; Chou, Wei-Yang.

AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 183-186 8006115 (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Improved electrical performance of organic thin-film transistors with modified high-K dielectrics

AU - Wu, Fu Chiao

AU - Yeh, Bo Liang

AU - Chou, Tzu Hsiu

AU - Chen, Jen-Sue

AU - Tsai, Min Ruei

AU - Cheng, Horng-Long

AU - Chou, Wei-Yang

PY - 2017/8/8

Y1 - 2017/8/8

N2 - We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.

AB - We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.

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M3 - Conference contribution

T3 - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

SP - 183

EP - 186

BT - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Wu FC, Yeh BL, Chou TH, Chen J-S, Tsai MR, Cheng H-L et al. Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 183-186. 8006115. (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).