Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Zhi-Kai Zhuang; Shui-Jinn Wang; Sheng Yi Wang; Hsiang Yi Chen; Chun Kai Liao; Sheng Tsang Hsiao; Bing Cheng You; Rong-Ming Ko

Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Zhi-Kai Zhuang, Shui-Jinn Wang, Sheng Yi Wang, Hsiang Yi Chen, Chun Kai Liao, Sheng Tsang Hsiao, Bing Cheng You, Rong-Ming Ko

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2018 International Conference on Solid State Devices and Materials (SSDM’18)
Place of Publication	Tokyo, Japan
Publication status	Published - 2018 Sept 11

Cite this

@inproceedings{3ab2e75df85a4b9297bbff6d17d036df,

title = "Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric",

author = "Zhi-Kai Zhuang and Shui-Jinn Wang and Wang, \{Sheng Yi\} and Chen, \{Hsiang Yi\} and Liao, \{Chun Kai\} and Hsiao, \{Sheng Tsang\} and You, \{Bing Cheng\} and Rong-Ming Ko",

year = "2018",

month = sep,

day = "11",

language = "English",

booktitle = "2018 International Conference on Solid State Devices and Materials (SSDM{\textquoteright}18)",

}

TY - GEN

T1 - Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

AU - Zhuang, Zhi-Kai

AU - Wang, Shui-Jinn

AU - Wang, Sheng Yi

AU - Chen, Hsiang Yi

AU - Liao, Chun Kai

AU - Hsiao, Sheng Tsang

AU - You, Bing Cheng

AU - Ko, Rong-Ming

PY - 2018/9/11

Y1 - 2018/9/11

M3 - Conference contribution

BT - 2018 International Conference on Solid State Devices and Materials (SSDM’18)

CY - Tokyo, Japan

ER -