Abstract
An InGaN/GaN light-emitting diode (LED) combined with a metal-oxide semiconductor (MOS) capacitor has been fabricated for high electrostatic discharge (ESD) protection. By connecting a MOS capacitor in parallel with the GaN-based LED, a level of defense against the ESD is significantly strengthened from 200 to 1900 V of human body mode (HBM), which corresponds to 6- to 7-fold enhancement in the ESD robustness of LEDs.
Original language | English |
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Pages (from-to) | 1043-1046 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 52 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2008 Jul |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry