Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor

R. W. Chuang, P. C. Tsai, Y. K. Su, C. H. Chu

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

An InGaN/GaN light-emitting diode (LED) combined with a metal-oxide semiconductor (MOS) capacitor has been fabricated for high electrostatic discharge (ESD) protection. By connecting a MOS capacitor in parallel with the GaN-based LED, a level of defense against the ESD is significantly strengthened from 200 to 1900 V of human body mode (HBM), which corresponds to 6- to 7-fold enhancement in the ESD robustness of LEDs.

Original languageEnglish
Pages (from-to)1043-1046
Number of pages4
JournalSolid-State Electronics
Volume52
Issue number7
DOIs
Publication statusPublished - 2008 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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