@article{7354d59c21e44f5eb9bf964e63f56e9a,
title = "Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes",
abstract = "GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.",
author = "Chang, {S. J.} and Chen, {C. H.} and Su, {Y. K.} and Sheu, {J. K.} and Lai, {W. C.} and Tsai, {J. M.} and Liu, {C. H.} and Chen, {S. C.}",
note = "Funding Information: Manuscript received November 19, 2002. This work was supported by the National Science Council of Taiwan, R.O.C., under Contracts NSC-88-2215-E-006-005 and NSC 91-2218-E-230-006. The review of this letter was arranged by Editor D. Ueda. S. J. Chang, Y. K. Su, and W. C. Lai are with the Institute of Microelectronics and the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. C. H. Chen is with the Department of Electronic Engineering, Cheng-Shiu Institute of Technology, Kaohsiung 830, Taiwan, R.O.C. J. K. Sheu is with the Department of Physics, National Central University, Chung-Li 320, Taiwan, R.O.C. J. M. Tsai is with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. C. H. Liu is with the Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui, 737, Taiwan, R.O.C. S. C. Chen is with the Department of Eletronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan, R.O.C. Digital Object Identifier 10.1109/LED.2003.809043",
year = "2003",
month = mar,
doi = "10.1109/LED.2003.809043",
language = "English",
volume = "24",
pages = "129--131",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}