Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

Shoou-Jinn Chang, C. H. Chen, Y. K. Su, Jinn-Kong Sheu, Wei-Chi Lai, J. M. Tsai, C. H. Liu, S. C. Chen

Research output: Contribution to journalLetter

57 Citations (Scopus)

Abstract

GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.

Original languageEnglish
Pages (from-to)129-131
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number3
DOIs
Publication statusPublished - 2003 Mar 1

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Light emitting diodes
Etching
Diodes
Optical losses
Electrostatic discharge
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chang, Shoou-Jinn ; Chen, C. H. ; Su, Y. K. ; Sheu, Jinn-Kong ; Lai, Wei-Chi ; Tsai, J. M. ; Liu, C. H. ; Chen, S. C. / Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes. In: IEEE Electron Device Letters. 2003 ; Vol. 24, No. 3. pp. 129-131.
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Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes. / Chang, Shoou-Jinn; Chen, C. H.; Su, Y. K.; Sheu, Jinn-Kong; Lai, Wei-Chi; Tsai, J. M.; Liu, C. H.; Chen, S. C.

In: IEEE Electron Device Letters, Vol. 24, No. 3, 01.03.2003, p. 129-131.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

AU - Chang, Shoou-Jinn

AU - Chen, C. H.

AU - Su, Y. K.

AU - Sheu, Jinn-Kong

AU - Lai, Wei-Chi

AU - Tsai, J. M.

AU - Liu, C. H.

AU - Chen, S. C.

PY - 2003/3/1

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