Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED

T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, Y. P. Hsu, W. C. Lai, J. K. Sheu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88SN/GaN Superlattice are introduced to improve ESD reliability in Nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88SN /GaN herterostructure. Therefore the probability of junction breakdown would be lower.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages77-78
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
Publication statusPublished - 2003 Jan 1
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 2003 Dec 102003 Dec 12

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period03-12-1003-12-12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Wen, T. C., Chang, S. J., Su, Y. K., Wu, L. W., Kuo, C. H., Hsu, Y. P., Lai, W. C., & Sheu, J. K. (2003). Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 77-78). [1272004] (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272004