Improved extraction efficiency of light-emitting diodes by wet-etching modifying AZO surface roughness

Ting Wei Kuo, Shi Xiong Lin, Yueh Yu Hung, Jui Hong Horng, Mau Phon Houng

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

In this letter, the AlGaInP light-emitting diodes (LEDs) between the air and GaP layer are added to the textured ZnO:Al (AZO) films in order to improve light extraction of the device. At 20 mA, the relative luminous intensity of textured AZO LEDs is increased by 129.9% when compared with the conventional sample. Furthermore, the far-field radiation pattern was improved with intensity not only at 0°, but also from 60° to 300°. Due to loss of internal Fresnel efficiency and critical angle efficiency, textured AZO LEDs are significantly improved by the wet-etching technique. The surface treatment of AZO films generates surface texturing that is characterized as random crater. It presents a better far-field radiation pattern when compared with nontextured AZO films. This letter has demonstrated the far-field radiation pattern and the theory for enhancing light emission efficiency of LEDs.

Original languageEnglish
Article number5686915
Pages (from-to)362-364
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number6
DOIs
Publication statusPublished - 2011 Mar 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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