Improved formal passivations of pseudomorphic high electron mobility transistors

Li Yang Chen; Shiou Ying Cheng; Kuei Yi Chu; Jung Hui Tsai; Tzu Pin Chen; Tsung Han Tsai; Wen Chau Liu

doi:10.1109/IWJT.2008.4540046

Improved formal passivations of pseudomorphic high electron mobility transistors

Li Yang Chen, Shiou Ying Cheng, Kuei Yi Chu, Jung Hui Tsai, Tzu Pin Chen, Tsung Han Tsai, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiN_x passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly degradations of device performance are caused by the temperature stress during the deposition of SiN_x layer and presence of surface traps at the SiN_x/AlGaAs interface. Based on these good results, the formal-passivated HEMT is expected to exhibit relatively better long-term operation stability and reliable device characteristics.

Original language	English
Title of host publication	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages	183-186
Number of pages	4
DOIs	https://doi.org/10.1109/IWJT.2008.4540046
Publication status	Published - 2008 Sept 8
Event	IWJT-2008 - International Workshop on Junction Technology - Shanghai, China Duration: 2008 May 15 → 2008 May 16

Publication series

Name	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

Other	IWJT-2008 - International Workshop on Junction Technology
Country/Territory	China
City	Shanghai
Period	08-05-15 → 08-05-16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IWJT.2008.4540046

Cite this

Chen, L. Y., Cheng, S. Y., Chu, K. Y., Tsai, J. H., Chen, T. P., Tsai, T. H., & Liu, W. C. (2008). Improved formal passivations of pseudomorphic high electron mobility transistors. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 183-186). Article 4540046 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540046

@inproceedings{34ca5c55c75c4dee90c4c9a2eca3b9fd,

title = "Improved formal passivations of pseudomorphic high electron mobility transistors",

abstract = "Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiNx passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly degradations of device performance are caused by the temperature stress during the deposition of SiNx layer and presence of surface traps at the SiNx/AlGaAs interface. Based on these good results, the formal-passivated HEMT is expected to exhibit relatively better long-term operation stability and reliable device characteristics.",

author = "Chen, {Li Yang} and Cheng, {Shiou Ying} and Chu, {Kuei Yi} and Tsai, {Jung Hui} and Chen, {Tzu Pin} and Tsai, {Tsung Han} and Liu, {Wen Chau}",

year = "2008",

month = sep,

day = "8",

doi = "10.1109/IWJT.2008.4540046",

language = "English",

isbn = "9781424417384",

series = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

pages = "183--186",

booktitle = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

note = "IWJT-2008 - International Workshop on Junction Technology ; Conference date: 15-05-2008 Through 16-05-2008",

}

Chen, LY, Cheng, SY, Chu, KY, Tsai, JH, Chen, TP, Tsai, TH & Liu, WC 2008, Improved formal passivations of pseudomorphic high electron mobility transistors. in IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology., 4540046, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology, pp. 183-186, IWJT-2008 - International Workshop on Junction Technology, Shanghai, China, 08-05-15. https://doi.org/10.1109/IWJT.2008.4540046

Improved formal passivations of pseudomorphic high electron mobility transistors. / Chen, Li Yang; Cheng, Shiou Ying; Chu, Kuei Yi et al.
IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 183-186 4540046 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Improved formal passivations of pseudomorphic high electron mobility transistors

AU - Chen, Li Yang

AU - Cheng, Shiou Ying

AU - Chu, Kuei Yi

AU - Tsai, Jung Hui

AU - Chen, Tzu Pin

AU - Tsai, Tsung Han

AU - Liu, Wen Chau

PY - 2008/9/8

Y1 - 2008/9/8

N2 - Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiNx passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly degradations of device performance are caused by the temperature stress during the deposition of SiNx layer and presence of surface traps at the SiNx/AlGaAs interface. Based on these good results, the formal-passivated HEMT is expected to exhibit relatively better long-term operation stability and reliable device characteristics.

AB - Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiNx passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly degradations of device performance are caused by the temperature stress during the deposition of SiNx layer and presence of surface traps at the SiNx/AlGaAs interface. Based on these good results, the formal-passivated HEMT is expected to exhibit relatively better long-term operation stability and reliable device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=50849108853&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50849108853&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2008.4540046

DO - 10.1109/IWJT.2008.4540046

M3 - Conference contribution

AN - SCOPUS:50849108853

SN - 9781424417384

T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

SP - 183

EP - 186

BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

T2 - IWJT-2008 - International Workshop on Junction Technology

Y2 - 15 May 2008 through 16 May 2008

ER -

Chen LY, Cheng SY, Chu KY, Tsai JH, Chen TP, Tsai TH et al. Improved formal passivations of pseudomorphic high electron mobility transistors. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 183-186. 4540046. (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). doi: 10.1109/IWJT.2008.4540046

Improved formal passivations of pseudomorphic high electron mobility transistors

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