Improved formal passivations of pseudomorphic high electron mobility transistors

Li Yang Chen, Shiou Ying Cheng, Kuei Yi Chu, Jung Hui Tsai, Tzu Pin Chen, Tsung Han Tsai, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiNx passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly degradations of device performance are caused by the temperature stress during the deposition of SiNx layer and presence of surface traps at the SiNx/AlGaAs interface. Based on these good results, the formal-passivated HEMT is expected to exhibit relatively better long-term operation stability and reliable device characteristics.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages183-186
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 8
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 2008 May 152008 May 16

Publication series

NameIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

OtherIWJT-2008 - International Workshop on Junction Technology
CountryChina
CityShanghai
Period08-05-1508-05-16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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