Improved GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing double δ-doping GaAs layers on both sides of the channel

H. M. Shieh; Wei-Chou Hsu; C. L. Wu

doi:10.1016/0038-1101(93)90159-N

Improved GaAs/In_0.25Ga_0.75As/GaAs pseudomorphic heterostructure by growing double δ-doping GaAs layers on both sides of the channel

H. M. Shieh, Wei-Chou Hsu, C. L. Wu

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A novel GaAs/In_0.25Ga_0.75As/GaAs heterostructure field effect transistor with δ-doping of the GaAs on both sides of the InGaAs channel has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Very high two dimensional electron gas (2DEG) concentration of 5.1 and 3.4 × 10¹² cm^-2 at 300 and 77 K respectively, along with enhanced electron mobilities of 4500 and 14100 cm²/v·s at 300 and 77 K respectively, were achieved. A maximum extrinsic transconductance of 140 mS/mm and a high saturation current density of 460 mA/mm at 300 K for a gate length of 2 μm, were obtained. A broad transconductance region extending from reverse to forward gate bias was observed due to the double δ-doped GaAs grown symmetrically on both sides of the channel.

Original language	English
Pages (from-to)	1235-1237
Number of pages	3
Journal	Solid State Electronics
Volume	36
Issue number	9
DOIs	https://doi.org/10.1016/0038-1101(93)90159-N
Publication status	Published - 1993 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Improved GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing double δ-doping GaAs layers on both sides of the channel",

abstract = "A novel GaAs/In0.25Ga0.75As/GaAs heterostructure field effect transistor with δ-doping of the GaAs on both sides of the InGaAs channel has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Very high two dimensional electron gas (2DEG) concentration of 5.1 and 3.4 × 1012 cm-2 at 300 and 77 K respectively, along with enhanced electron mobilities of 4500 and 14100 cm2/v·s at 300 and 77 K respectively, were achieved. A maximum extrinsic transconductance of 140 mS/mm and a high saturation current density of 460 mA/mm at 300 K for a gate length of 2 μm, were obtained. A broad transconductance region extending from reverse to forward gate bias was observed due to the double δ-doped GaAs grown symmetrically on both sides of the channel.",

author = "Shieh, {H. M.} and Wei-Chou Hsu and Wu, {C. L.}",

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T1 - Improved GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing double δ-doping GaAs layers on both sides of the channel

AU - Shieh, H. M.

AU - Hsu, Wei-Chou

AU - Wu, C. L.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - A novel GaAs/In0.25Ga0.75As/GaAs heterostructure field effect transistor with δ-doping of the GaAs on both sides of the InGaAs channel has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Very high two dimensional electron gas (2DEG) concentration of 5.1 and 3.4 × 1012 cm-2 at 300 and 77 K respectively, along with enhanced electron mobilities of 4500 and 14100 cm2/v·s at 300 and 77 K respectively, were achieved. A maximum extrinsic transconductance of 140 mS/mm and a high saturation current density of 460 mA/mm at 300 K for a gate length of 2 μm, were obtained. A broad transconductance region extending from reverse to forward gate bias was observed due to the double δ-doped GaAs grown symmetrically on both sides of the channel.

AB - A novel GaAs/In0.25Ga0.75As/GaAs heterostructure field effect transistor with δ-doping of the GaAs on both sides of the InGaAs channel has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Very high two dimensional electron gas (2DEG) concentration of 5.1 and 3.4 × 1012 cm-2 at 300 and 77 K respectively, along with enhanced electron mobilities of 4500 and 14100 cm2/v·s at 300 and 77 K respectively, were achieved. A maximum extrinsic transconductance of 140 mS/mm and a high saturation current density of 460 mA/mm at 300 K for a gate length of 2 μm, were obtained. A broad transconductance region extending from reverse to forward gate bias was observed due to the double δ-doped GaAs grown symmetrically on both sides of the channel.

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Improved GaAs/In_0.25Ga_0.75As/GaAs pseudomorphic heterostructure by growing double δ-doping GaAs layers on both sides of the channel

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