Improved GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing double δ-doping GaAs layers on both sides of the channel

H. M. Shieh, Wei-Chou Hsu, C. L. Wu

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1 Citation (Scopus)

Abstract

A novel GaAs/In0.25Ga0.75As/GaAs heterostructure field effect transistor with δ-doping of the GaAs on both sides of the InGaAs channel has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Very high two dimensional electron gas (2DEG) concentration of 5.1 and 3.4 × 1012 cm-2 at 300 and 77 K respectively, along with enhanced electron mobilities of 4500 and 14100 cm2/v·s at 300 and 77 K respectively, were achieved. A maximum extrinsic transconductance of 140 mS/mm and a high saturation current density of 460 mA/mm at 300 K for a gate length of 2 μm, were obtained. A broad transconductance region extending from reverse to forward gate bias was observed due to the double δ-doped GaAs grown symmetrically on both sides of the channel.

Original languageEnglish
Pages (from-to)1235-1237
Number of pages3
JournalSolid State Electronics
Volume36
Issue number9
DOIs
Publication statusPublished - 1993 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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