Improved GaAs/In_0.25Ga_0.75As/GaAs pseudomorphic heterostructure by growing double δ-doping GaAs layers on both sides of the channel

Engineering & Materials Science

• Two dimensional electron gas 100%
• Heterojunctions 74%
• Transconductance 68%
• Doping (additives) 63%
• Low pressure chemical vapor deposition 46%
• Metallorganic chemical vapor deposition 44%
• Electron mobility 44%
• High electron mobility transistors 32%
• Current density 27%

Chemical Compounds

• Transconductance 87%
• Two-Dimensional Electron Gas 50%
• Electron Mobility 34%
• Field Effect 28%
• Chemical Vapour Deposition 25%
• Current Density 20%
• Length 17%

Physics & Astronomy

• transconductance 62%
• electron mobility 29%
• electron gas 27%
• metalorganic chemical vapor deposition 27%
• low pressure 23%
• field effect transistors 22%
• current density 20%
• saturation 19%