Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single δ-doped, and double δ-doped HEBTs, respectively. Moreover, the offset voltage of the double δ-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the δ-doped emitter structure and undoped spacers on both sides of the base.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics