TY - JOUR
T1 - Improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers
AU - Lin, Y. S.
AU - Hsu, W. C.
AU - Lu, S. Y.
AU - Su, J. S.
AU - Lin, W.
N1 - Funding Information:
This work was supported by the National Science Council, Republic of China under Contract No. NSC 88-2215-E-006-011.
PY - 1999/4/30
Y1 - 1999/4/30
N2 - Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single δ-doped, and double δ-doped HEBTs, respectively. Moreover, the offset voltage of the double δ-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the δ-doped emitter structure and undoped spacers on both sides of the base.
AB - Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single δ-doped, and double δ-doped HEBTs, respectively. Moreover, the offset voltage of the double δ-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the δ-doped emitter structure and undoped spacers on both sides of the base.
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U2 - 10.1016/S0254-0584(99)00029-2
DO - 10.1016/S0254-0584(99)00029-2
M3 - Article
AN - SCOPUS:0032654469
SN - 0254-0584
VL - 59
SP - 91
EP - 95
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
IS - 1
ER -