Improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers

Y. S. Lin, W. C. Hsu, S. Y. Lu, J. S. Su, W. Lin

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single δ-doped, and double δ-doped HEBTs, respectively. Moreover, the offset voltage of the double δ-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the δ-doped emitter structure and undoped spacers on both sides of the base.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalMaterials Chemistry and Physics
Volume59
Issue number1
DOIs
Publication statusPublished - 1999 Apr 30

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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