Improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers

Y. S. Lin, Wei-Chou Hsu, S. Y. Lu, J. S. Su, W. Lin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single δ-doped, and double δ-doped HEBTs, respectively. Moreover, the offset voltage of the double δ-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the δ-doped emitter structure and undoped spacers on both sides of the base.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalMaterials Chemistry and Physics
Volume59
Issue number1
DOIs
Publication statusPublished - 1999 Apr 30

Fingerprint

Bipolar transistors
bipolar transistors
spacers
Heterojunctions
heterojunctions
emitters
Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Electric potential
electric potential
metalorganic chemical vapor deposition
low pressure
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lin, Y. S. ; Hsu, Wei-Chou ; Lu, S. Y. ; Su, J. S. ; Lin, W. / Improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers. In: Materials Chemistry and Physics. 1999 ; Vol. 59, No. 1. pp. 91-95.
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Improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers. / Lin, Y. S.; Hsu, Wei-Chou; Lu, S. Y.; Su, J. S.; Lin, W.

In: Materials Chemistry and Physics, Vol. 59, No. 1, 30.04.1999, p. 91-95.

Research output: Contribution to journalArticle

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AU - Lin, Y. S.

AU - Hsu, Wei-Chou

AU - Lu, S. Y.

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AU - Lin, W.

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AB - Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single δ-doped, and double δ-doped HEBTs, respectively. Moreover, the offset voltage of the double δ-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the δ-doped emitter structure and undoped spacers on both sides of the base.

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