Improved high-Q microwave dielectric material using B2O3-doped MgNb2O6 ceramics

Cheng-Liang Huang, Kuo Hau Chiang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this paper, the microstructures and microwave dielectric properties of MgNb2O6 ceramics doped with B2O3 are investigated. The formation of an impurity phase is not detected by X-ray diffraction pattern and the grain growth is apparent with increasing the sintering temperature from scanning electron microscopy results. With adding the sintering aid B2O3, not only decreasing the sintering temperature but also enhancing the quality factor (Q) value are obtained. The maximum Q × f value obtained in this study is 115,800(GHz) with 0.25 wt.% B2O3 added sintered at 1260 °C that possesses a dielectric constant (εr) of 21.5 and the temperature coefficients of resonant frequency (τf) of -48 ppm/°C. The correlation between dielectric properties and the microstructures with different doped amounts of B2O3 is also discussed.

Original languageEnglish
Pages (from-to)243-246
Number of pages4
JournalMaterials Science and Engineering A
Volume474
Issue number1-2
DOIs
Publication statusPublished - 2008 Feb 15

Fingerprint

Q factors
sintering
Sintering
Microwaves
ceramics
microwaves
Dielectric properties
dielectric properties
microstructure
Microstructure
Grain growth
Temperature
Diffraction patterns
temperature
resonant frequencies
Natural frequencies
Permittivity
diffraction patterns
Impurities
permittivity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "In this paper, the microstructures and microwave dielectric properties of MgNb2O6 ceramics doped with B2O3 are investigated. The formation of an impurity phase is not detected by X-ray diffraction pattern and the grain growth is apparent with increasing the sintering temperature from scanning electron microscopy results. With adding the sintering aid B2O3, not only decreasing the sintering temperature but also enhancing the quality factor (Q) value are obtained. The maximum Q × f value obtained in this study is 115,800(GHz) with 0.25 wt.{\%} B2O3 added sintered at 1260 °C that possesses a dielectric constant (εr) of 21.5 and the temperature coefficients of resonant frequency (τf) of -48 ppm/°C. The correlation between dielectric properties and the microstructures with different doped amounts of B2O3 is also discussed.",
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Improved high-Q microwave dielectric material using B2O3-doped MgNb2O6 ceramics. / Huang, Cheng-Liang; Chiang, Kuo Hau.

In: Materials Science and Engineering A, Vol. 474, No. 1-2, 15.02.2008, p. 243-246.

Research output: Contribution to journalArticle

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