Improved high Q value of MgTiO3-CaTiO3 microwave dielectric ceramics at low sintering temperature

Cheng-Liang Huang, Ming Hung Weng

Research output: Contribution to journalArticle

143 Citations (Scopus)

Abstract

MgTiO3-based ceramics have been prepared with conventional solid-state route. With 5 mol% CaTiO3 addition, 0.95MgTiO3-0.05CaTiO3 ceramics can give εr ∼20-21, Q×f values ∼56,000 (at 7 GHz) and a τ f value of ∼0 ppm/°C. However, sintering temperature still remained above 1400°C. Doping with B2O3 (up to 5 wt%) can effectively promote the densification and the dielectric properties of 0.95MgTiO3-0.05CaTiO3 ceramics. It is found that 0.95MgTiO3-0.05CaTiO3 ceramics can be sintered at 1200°C due to the liquid phase effect of B2O3 addition observed by Scanning Electronic Microscopy. The effect of B2O3 addition on the microwave dielectric properties and the microstructures of 0.95MgTiO3-0.05CaTiO3 ceramics are also investigated. For practical applications, 0.95MgTiO3-0.05CaTiO3 ceramics with 2 wt% B2O3 addition gives: εr ∼21.2, Q×f values ∼62,000 (at 8 GHz), and a τf value of ∼4 ppm/° C.

Original languageEnglish
Pages (from-to)2741-2750
Number of pages10
JournalMaterials Research Bulletin
Volume36
Issue number15
DOIs
Publication statusPublished - 2001 Dec 1

Fingerprint

Dielectric properties
Q factors
sintering
Sintering
Microwaves
ceramics
microwaves
Densification
Microscopic examination
Doping (additives)
Scanning
Temperature
Microstructure
temperature
dielectric properties
Liquids
densification
magnesium titanate
boron oxide
perovskite

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Improved high Q value of MgTiO3-CaTiO3 microwave dielectric ceramics at low sintering temperature",
abstract = "MgTiO3-based ceramics have been prepared with conventional solid-state route. With 5 mol{\%} CaTiO3 addition, 0.95MgTiO3-0.05CaTiO3 ceramics can give εr ∼20-21, Q×f values ∼56,000 (at 7 GHz) and a τ f value of ∼0 ppm/°C. However, sintering temperature still remained above 1400°C. Doping with B2O3 (up to 5 wt{\%}) can effectively promote the densification and the dielectric properties of 0.95MgTiO3-0.05CaTiO3 ceramics. It is found that 0.95MgTiO3-0.05CaTiO3 ceramics can be sintered at 1200°C due to the liquid phase effect of B2O3 addition observed by Scanning Electronic Microscopy. The effect of B2O3 addition on the microwave dielectric properties and the microstructures of 0.95MgTiO3-0.05CaTiO3 ceramics are also investigated. For practical applications, 0.95MgTiO3-0.05CaTiO3 ceramics with 2 wt{\%} B2O3 addition gives: εr ∼21.2, Q×f values ∼62,000 (at 8 GHz), and a τf value of ∼4 ppm/° C.",
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Improved high Q value of MgTiO3-CaTiO3 microwave dielectric ceramics at low sintering temperature. / Huang, Cheng-Liang; Weng, Ming Hung.

In: Materials Research Bulletin, Vol. 36, No. 15, 01.12.2001, p. 2741-2750.

Research output: Contribution to journalArticle

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