Improved hydrogen sensing characteristics of a Pt/SiO2/GaN Schottky diode

Tsung Han Tsai; Jun Rui Huang; Kun Wei Lin; Wei Chou Hsu; Huey Ing Chen; Wen Chau Liu

doi:10.1016/j.snb.2007.08.028

Improved hydrogen sensing characteristics of a Pt/SiO₂/GaN Schottky diode

Tsung Han Tsai, Jun Rui Huang, Kun Wei Lin, Wei Chou Hsu, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

The hydrogen sensing and response characteristics of Pt/GaN (metal-semiconductor, MS) and Pt/SiO₂/GaN (metal-insulator-semiconductor, MIS) Schottky diodes under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied MS and MIS devices exhibit hydrogen sensing performance, including forward-bias hydrogen response (S_F) of 609 (MS) and 14,690 (MIS) (in 9970 ppm H₂/air), reverse-bias hydrogen response (S_R) of 5630 (MS) and 44,640 (MIS) (in 9970 ppm H₂/air), Schottky barrier height variation (Δφ{symbol}_b) of 195.9 (MS) and 231.6 meV (MIS) (in 9970 ppm H₂/air), respectively. Based on the equilibrium adsorption analysis, the hydrogen adsorption enthalpy (ΔH°) of the studied MS and MIS devices are -10.21 kJ/mol and -19.5 kJ/mol, respectively. The studied MIS device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction. Experimentally, the hydrogen detection adsorption time constants (τ_a) of the studied MS and MIS devices decrease from 25 to 3 s and from 12 to 2 s, respectively, as the temperature increases from 300 to 700 K. In addition, according to the kinetic adsorption analysis, the activation energy (E_a) of the studied MS and MIS devices are 4.498 kJ/mol and 2.885 kJ/mol, respectively. This implies that the studied MIS device can also perform more rapid hydrogen detection. Therefore, the studied Pt/SiO₂/GaN (MIS) Schottky diode exhibits a promise for high performance hydrogen sensor applications.

Original language	English
Pages (from-to)	292-302
Number of pages	11
Journal	Sensors and Actuators, B: Chemical
Volume	129
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2007.08.028
Publication status	Published - 2008 Jan 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2007.08.028

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@article{164fc57c2506483b87e58d23dee5594e,

title = "Improved hydrogen sensing characteristics of a Pt/SiO2/GaN Schottky diode",

abstract = "The hydrogen sensing and response characteristics of Pt/GaN (metal-semiconductor, MS) and Pt/SiO2/GaN (metal-insulator-semiconductor, MIS) Schottky diodes under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied MS and MIS devices exhibit hydrogen sensing performance, including forward-bias hydrogen response (SF) of 609 (MS) and 14,690 (MIS) (in 9970 ppm H2/air), reverse-bias hydrogen response (SR) of 5630 (MS) and 44,640 (MIS) (in 9970 ppm H2/air), Schottky barrier height variation (Δφ{symbol}b) of 195.9 (MS) and 231.6 meV (MIS) (in 9970 ppm H2/air), respectively. Based on the equilibrium adsorption analysis, the hydrogen adsorption enthalpy (ΔH°) of the studied MS and MIS devices are -10.21 kJ/mol and -19.5 kJ/mol, respectively. The studied MIS device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction. Experimentally, the hydrogen detection adsorption time constants (τa) of the studied MS and MIS devices decrease from 25 to 3 s and from 12 to 2 s, respectively, as the temperature increases from 300 to 700 K. In addition, according to the kinetic adsorption analysis, the activation energy (Ea) of the studied MS and MIS devices are 4.498 kJ/mol and 2.885 kJ/mol, respectively. This implies that the studied MIS device can also perform more rapid hydrogen detection. Therefore, the studied Pt/SiO2/GaN (MIS) Schottky diode exhibits a promise for high performance hydrogen sensor applications.",

author = "Tsai, {Tsung Han} and Huang, {Jun Rui} and Lin, {Kun Wei} and Hsu, {Wei Chou} and Chen, {Huey Ing} and Liu, {Wen Chau}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under contract no. NSC95-2221-E-006-424. ",

year = "2008",

month = jan,

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doi = "10.1016/j.snb.2007.08.028",

language = "English",

volume = "129",

pages = "292--302",

journal = "Sensors and Actuators, B: Chemical",

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TY - JOUR

T1 - Improved hydrogen sensing characteristics of a Pt/SiO2/GaN Schottky diode

AU - Tsai, Tsung Han

AU - Huang, Jun Rui

AU - Lin, Kun Wei

AU - Hsu, Wei Chou

AU - Chen, Huey Ing

AU - Liu, Wen Chau

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under contract no. NSC95-2221-E-006-424.

PY - 2008/1/29

Y1 - 2008/1/29

N2 - The hydrogen sensing and response characteristics of Pt/GaN (metal-semiconductor, MS) and Pt/SiO2/GaN (metal-insulator-semiconductor, MIS) Schottky diodes under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied MS and MIS devices exhibit hydrogen sensing performance, including forward-bias hydrogen response (SF) of 609 (MS) and 14,690 (MIS) (in 9970 ppm H2/air), reverse-bias hydrogen response (SR) of 5630 (MS) and 44,640 (MIS) (in 9970 ppm H2/air), Schottky barrier height variation (Δφ{symbol}b) of 195.9 (MS) and 231.6 meV (MIS) (in 9970 ppm H2/air), respectively. Based on the equilibrium adsorption analysis, the hydrogen adsorption enthalpy (ΔH°) of the studied MS and MIS devices are -10.21 kJ/mol and -19.5 kJ/mol, respectively. The studied MIS device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction. Experimentally, the hydrogen detection adsorption time constants (τa) of the studied MS and MIS devices decrease from 25 to 3 s and from 12 to 2 s, respectively, as the temperature increases from 300 to 700 K. In addition, according to the kinetic adsorption analysis, the activation energy (Ea) of the studied MS and MIS devices are 4.498 kJ/mol and 2.885 kJ/mol, respectively. This implies that the studied MIS device can also perform more rapid hydrogen detection. Therefore, the studied Pt/SiO2/GaN (MIS) Schottky diode exhibits a promise for high performance hydrogen sensor applications.

AB - The hydrogen sensing and response characteristics of Pt/GaN (metal-semiconductor, MS) and Pt/SiO2/GaN (metal-insulator-semiconductor, MIS) Schottky diodes under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied MS and MIS devices exhibit hydrogen sensing performance, including forward-bias hydrogen response (SF) of 609 (MS) and 14,690 (MIS) (in 9970 ppm H2/air), reverse-bias hydrogen response (SR) of 5630 (MS) and 44,640 (MIS) (in 9970 ppm H2/air), Schottky barrier height variation (Δφ{symbol}b) of 195.9 (MS) and 231.6 meV (MIS) (in 9970 ppm H2/air), respectively. Based on the equilibrium adsorption analysis, the hydrogen adsorption enthalpy (ΔH°) of the studied MS and MIS devices are -10.21 kJ/mol and -19.5 kJ/mol, respectively. The studied MIS device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction. Experimentally, the hydrogen detection adsorption time constants (τa) of the studied MS and MIS devices decrease from 25 to 3 s and from 12 to 2 s, respectively, as the temperature increases from 300 to 700 K. In addition, according to the kinetic adsorption analysis, the activation energy (Ea) of the studied MS and MIS devices are 4.498 kJ/mol and 2.885 kJ/mol, respectively. This implies that the studied MIS device can also perform more rapid hydrogen detection. Therefore, the studied Pt/SiO2/GaN (MIS) Schottky diode exhibits a promise for high performance hydrogen sensor applications.

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DO - 10.1016/j.snb.2007.08.028

M3 - Article

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SN - 0925-4005

VL - 129

SP - 292

EP - 302

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

IS - 1

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Improved hydrogen sensing characteristics of a Pt/SiO₂/GaN Schottky diode

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