Improved hydrogen-sensing performance of a Pd/GaN Schottky diode with a surface plasma treatment approach

Tai You Chen, Huey Ing Chen, Chien Chang Huang, Chi Shiang Hsu, Po Shun Chiu, Po Cheng Chou, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The improved hydrogen-sensing performance of a Pd/GaN Schottky diode with a simple surface treatment is demonstrated. The studied device with an inductively coupled-plasma (ICP)-treatment shows both the good sensitivity and fast response. A high hydrogen detection sensing response of 2.05 × 105, under exposing to a 10,000 ppm H2/air gas at room temperature, is obtained. It is found that, due to the increased surface roughness, more hydrogen atoms are adsorbed on the active layer which leads to the substantial increase of current change. In addition, the studied device shows a stable and widespread reverse voltage operating regime (-0.3 to -3 V) and a fast response about of 2.9 s. Therefore, this simple surface treatment approach gives the promise for hydrogen sensing applications.

Original languageEnglish
Pages (from-to)159-162
Number of pages4
JournalSensors and Actuators, B: Chemical
Volume159
Issue number1
DOIs
Publication statusPublished - 2011 Nov 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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