Pt SiO2 GaN (MIS) and PtGaN (MS) Schottky diodes exhibit hydrogen-sensing characteristics, including forward sensitivity ratios (SF) of 14685 and 603.9, reverse sensitivity ratios (SR) of 44636 and 5626 (in 9970 ppm H2 air), and Schottky barrier height variations (Δ φb) of 231.6 and 195.9 meV (in 9970 ppm H2 air) at 300 K, respectively. As compared with the MS device, the studied MIS device manifests a larger hydrogen-detection capability. This result implies that the SiO2 insulator surface plays a strikingly important role in producing the excellent hydrogen-sensing response. Furthermore, reproducible responses at various temperatures are also realized.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering