Improved hydrogen-sensing properties of a Pt SiO2 GaN schottky diode

Tsung Han Tsai, Jun Rui Huang, Kun Wei Lin, Chin Wen Hung, Wei-Chou Hsu, Huey-Ing Chen, Wen-Chau Liu

Research output: Contribution to journalArticle

16 Citations (Scopus)


Pt SiO2 GaN (MIS) and PtGaN (MS) Schottky diodes exhibit hydrogen-sensing characteristics, including forward sensitivity ratios (SF) of 14685 and 603.9, reverse sensitivity ratios (SR) of 44636 and 5626 (in 9970 ppm H2 air), and Schottky barrier height variations (Δ φb) of 231.6 and 195.9 meV (in 9970 ppm H2 air) at 300 K, respectively. As compared with the MS device, the studied MIS device manifests a larger hydrogen-detection capability. This result implies that the SiO2 insulator surface plays a strikingly important role in producing the excellent hydrogen-sensing response. Furthermore, reproducible responses at various temperatures are also realized.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number12
Publication statusPublished - 2007 Oct 22

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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