Improved InAlGaP-based heterostructure field-effect transistors

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, K. H. Su, J. C. Huang, C. H. Ho

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7 Citations (Scopus)


This investigation proposes the improved double δ-doped InGaP/InGaAs heterostructure field-effect transistor (HFET) grown by metalorganic chemical vapour deposition. The extrinsic transconductance (gm) and saturation current density (Imax) of the double δ-doped InGaP/InGaAs HFET are superior to those of the previously reported single δ-doped InGaP/InGaAs HFETs. The first n-InAlGaP/GaAs HFET is also investigated because it has a high Schottky barrier, a large high band gap and a large conduction-band discontinuity (ΔEC). Even without indium in the channel of the InAlGaP/GaAs HFET, gm and Imax are as high as 170 mS mm-1 and 410 mA mm-1, respectively. The g m values of these two HFETs remain large even when the gate voltages are positive. Moreover, the breakdown voltages of the two examined HFETs both exceed 40 V.

Original languageEnglish
Pages (from-to)540-543
Number of pages4
JournalSemiconductor Science and Technology
Issue number4
Publication statusPublished - 2006 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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