Improved InAlGaP-based heterostructure field-effect transistors

Y. S. Lin; D. H. Huang; W. C. Hsu; T. B. Wang; K. H. Su; J. C. Huang; C. H. Ho

doi:10.1088/0268-1242/21/4/021

Improved InAlGaP-based heterostructure field-effect transistors

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, K. H. Su, J. C. Huang, C. H. Ho

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This investigation proposes the improved double δ-doped InGaP/InGaAs heterostructure field-effect transistor (HFET) grown by metalorganic chemical vapour deposition. The extrinsic transconductance (g_m) and saturation current density (I_max) of the double δ-doped InGaP/InGaAs HFET are superior to those of the previously reported single δ-doped InGaP/InGaAs HFETs. The first n-InAlGaP/GaAs HFET is also investigated because it has a high Schottky barrier, a large high band gap and a large conduction-band discontinuity (ΔE_C). Even without indium in the channel of the InAlGaP/GaAs HFET, g_m and I_max are as high as 170 mS mm^-1 and 410 mA mm^-1, respectively. The g _m values of these two HFETs remain large even when the gate voltages are positive. Moreover, the breakdown voltages of the two examined HFETs both exceed 40 V.

Original language	English
Pages (from-to)	540-543
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	21
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/21/4/021
Publication status	Published - 2006 Apr 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/21/4/021

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title = "Improved InAlGaP-based heterostructure field-effect transistors",

abstract = "This investigation proposes the improved double δ-doped InGaP/InGaAs heterostructure field-effect transistor (HFET) grown by metalorganic chemical vapour deposition. The extrinsic transconductance (gm) and saturation current density (Imax) of the double δ-doped InGaP/InGaAs HFET are superior to those of the previously reported single δ-doped InGaP/InGaAs HFETs. The first n-InAlGaP/GaAs HFET is also investigated because it has a high Schottky barrier, a large high band gap and a large conduction-band discontinuity (ΔEC). Even without indium in the channel of the InAlGaP/GaAs HFET, gm and Imax are as high as 170 mS mm-1 and 410 mA mm-1, respectively. The g m values of these two HFETs remain large even when the gate voltages are positive. Moreover, the breakdown voltages of the two examined HFETs both exceed 40 V.",

author = "Lin, {Y. S.} and Huang, {D. H.} and Hsu, {W. C.} and Wang, {T. B.} and Su, {K. H.} and Huang, {J. C.} and Ho, {C. H.}",

year = "2006",

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doi = "10.1088/0268-1242/21/4/021",

language = "English",

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T1 - Improved InAlGaP-based heterostructure field-effect transistors

AU - Lin, Y. S.

AU - Huang, D. H.

AU - Hsu, W. C.

AU - Wang, T. B.

AU - Su, K. H.

AU - Huang, J. C.

AU - Ho, C. H.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - This investigation proposes the improved double δ-doped InGaP/InGaAs heterostructure field-effect transistor (HFET) grown by metalorganic chemical vapour deposition. The extrinsic transconductance (gm) and saturation current density (Imax) of the double δ-doped InGaP/InGaAs HFET are superior to those of the previously reported single δ-doped InGaP/InGaAs HFETs. The first n-InAlGaP/GaAs HFET is also investigated because it has a high Schottky barrier, a large high band gap and a large conduction-band discontinuity (ΔEC). Even without indium in the channel of the InAlGaP/GaAs HFET, gm and Imax are as high as 170 mS mm-1 and 410 mA mm-1, respectively. The g m values of these two HFETs remain large even when the gate voltages are positive. Moreover, the breakdown voltages of the two examined HFETs both exceed 40 V.

AB - This investigation proposes the improved double δ-doped InGaP/InGaAs heterostructure field-effect transistor (HFET) grown by metalorganic chemical vapour deposition. The extrinsic transconductance (gm) and saturation current density (Imax) of the double δ-doped InGaP/InGaAs HFET are superior to those of the previously reported single δ-doped InGaP/InGaAs HFETs. The first n-InAlGaP/GaAs HFET is also investigated because it has a high Schottky barrier, a large high band gap and a large conduction-band discontinuity (ΔEC). Even without indium in the channel of the InAlGaP/GaAs HFET, gm and Imax are as high as 170 mS mm-1 and 410 mA mm-1, respectively. The g m values of these two HFETs remain large even when the gate voltages are positive. Moreover, the breakdown voltages of the two examined HFETs both exceed 40 V.

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U2 - 10.1088/0268-1242/21/4/021

DO - 10.1088/0268-1242/21/4/021

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AN - SCOPUS:33644974359

SN - 0268-1242

VL - 21

SP - 540

EP - 543

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

ER -

Improved InAlGaP-based heterostructure field-effect transistors

Abstract

All Science Journal Classification (ASJC) codes

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