Improved in0.45Al0.55As/In0.45Ga 0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor

Yeong Jia Chen, Ching Sung Lee, Tzong Bin Wang, Wei Chou Hsu, Yen Wei Chen, Ke Hua Su, Chang Luen Wu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A δ-doped In0.45Al0.55As/InGaAs metamorphic high-electron-mobility transistor (MHEMT) using an In0.45Ga 0.55As/In0.65Ga0.35 As inverse composite channel has been fabricated successfully and demonstrated. The inverse composite channel significantly reduces Coulomb scattering and consequently improves electron mobility as well as carrier confinement. Experimentally, a high extrinsic transconductance of 321 mS/mm and a drain-source saturation current density of 342mA/ mm are obtained for a 0.65 × 200 μm2 gate at 300 K. Meanwhile, degradation of the studied device, in terms of parameters such as Gm.max, IDSS, and Vth, with increasing temperature is not evident. A positive temperature coefficient of V th, is observed. The measured fT and fmax, for a 0.65-μm-gate device are 41.6 and 53 GHz, respectively. In addition, the studied device also shows good microwave performances in a flat and wide operation region. From VGS = -2.5 to 0.5 V, the values of f T and fmax are still over 33 GHz.

Original languageEnglish
Pages (from-to)5903-5908
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number8
DOIs
Publication statusPublished - 2005 Aug 5

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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