Abstract
An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.
Original language | English |
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Article number | 6504470 |
Pages (from-to) | 777-779 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 34 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2013 Jun 3 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering