Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector

Yu Chih Chang; Jian Kai Liou; Wen-Chau Liu

doi:10.1109/LED.2013.2255020

Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector

Yu Chih Chang, Jian Kai Liou, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO₂ nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.

Original language	English
Article number	6504470
Pages (from-to)	777-779
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/LED.2013.2255020
Publication status	Published - 2013 Jun 3

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2013.2255020

Fingerprint Dive into the research topics of 'Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector'. Together they form a unique fingerprint.

Cite this

@article{9e231c7a789d4ccd88704b45c3b6d95b,

title = "Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector",

abstract = "An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.",

author = "Chang, {Yu Chih} and Liou, {Jian Kai} and Wen-Chau Liu",

year = "2013",

month = jun,

day = "3",

doi = "10.1109/LED.2013.2255020",

language = "English",

volume = "34",

pages = "777--779",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector

AU - Chang, Yu Chih

AU - Liou, Jian Kai

AU - Liu, Wen-Chau

PY - 2013/6/3

Y1 - 2013/6/3

N2 - An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.

AB - An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.

UR - http://www.scopus.com/inward/record.url?scp=84878307697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878307697&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2255020

DO - 10.1109/LED.2013.2255020

M3 - Article

AN - SCOPUS:84878307697

VL - 34

SP - 777

EP - 779

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

M1 - 6504470

ER -