Abstract
An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.
| Original language | English |
|---|---|
| Article number | 6504470 |
| Pages (from-to) | 777-779 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 34 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2013 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector. / Chang, Yu Chih; Liou, Jian Kai; Liu, Wen-Chau.
In: IEEE Electron Device Letters, Vol. 34, No. 6, 6504470, 2013, p. 777-779.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector
AU - Chang, Yu Chih
AU - Liou, Jian Kai
AU - Liu, Wen-Chau
PY - 2013
Y1 - 2013
N2 - An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.
AB - An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.
UR - http://www.scopus.com/inward/record.url?scp=84878307697&partnerID=8YFLogxK
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U2 - 10.1109/LED.2013.2255020
DO - 10.1109/LED.2013.2255020
M3 - Article
VL - 34
SP - 777
EP - 779
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 6
M1 - 6504470
ER -