Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector

Yu Chih Chang, Jian Kai Liou, Wen-Chau Liu

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.

Original languageEnglish
Article number6504470
Pages (from-to)777-779
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number6
DOIs
Publication statusPublished - 2013

Fingerprint

Photonic crystals
Light emitting diodes
Crystal structure
Aluminum Oxide
Nanospheres
Sapphire
Light scattering
Monolayers
Electric properties
Degradation
Coatings
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

@article{9e231c7a789d4ccd88704b45c3b6d95b,
title = "Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector",
abstract = "An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6{\%} enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.",
author = "Chang, {Yu Chih} and Liou, {Jian Kai} and Wen-Chau Liu",
year = "2013",
doi = "10.1109/LED.2013.2255020",
language = "English",
volume = "34",
pages = "777--779",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector. / Chang, Yu Chih; Liou, Jian Kai; Liu, Wen-Chau.

In: IEEE Electron Device Letters, Vol. 34, No. 6, 6504470, 2013, p. 777-779.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector

AU - Chang, Yu Chih

AU - Liou, Jian Kai

AU - Liu, Wen-Chau

PY - 2013

Y1 - 2013

N2 - An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.

AB - An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.

UR - http://www.scopus.com/inward/record.url?scp=84878307697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878307697&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2255020

DO - 10.1109/LED.2013.2255020

M3 - Article

VL - 34

SP - 777

EP - 779

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

M1 - 6504470

ER -