Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer

Shui-Jinn Wang, Pei Ren Wang, Der Ming Kuo, Hsiun Rong Kuo, Jian Shian Kuo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The use of a refractive index matching (RIM) structure with indium zinc oxide (IZO) transparent conduction layer and SiO2 nanotube (SiO 2-NT) arrays to improve light extraction of vertical structure KOH-etched GaN-based light emitting diodes (VLEDs) is demonstrated. Compared to regular VLED with KOH-roughened surface, it shows considerable gains in light emitted critical angle and light output power by 21.3° and 103% at 350 mA, respectively. These improvements could be attributed to the effectiveness of the IZO/SiO2-NT RIM scheme in ameliorating current crowding and significantly minimizing the total internal reflection effect.

Original languageEnglish
Article number131111
JournalApplied Physics Letters
Volume99
Issue number13
DOIs
Publication statusPublished - 2011 Sep 26

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metal oxides
nanotubes
light emitting diodes
conduction
zinc oxides
indium oxides
output
refractivity
crowding

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer",
abstract = "The use of a refractive index matching (RIM) structure with indium zinc oxide (IZO) transparent conduction layer and SiO2 nanotube (SiO 2-NT) arrays to improve light extraction of vertical structure KOH-etched GaN-based light emitting diodes (VLEDs) is demonstrated. Compared to regular VLED with KOH-roughened surface, it shows considerable gains in light emitted critical angle and light output power by 21.3° and 103{\%} at 350 mA, respectively. These improvements could be attributed to the effectiveness of the IZO/SiO2-NT RIM scheme in ameliorating current crowding and significantly minimizing the total internal reflection effect.",
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Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer. / Wang, Shui-Jinn; Wang, Pei Ren; Kuo, Der Ming; Kuo, Hsiun Rong; Kuo, Jian Shian.

In: Applied Physics Letters, Vol. 99, No. 13, 131111, 26.09.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer

AU - Wang, Shui-Jinn

AU - Wang, Pei Ren

AU - Kuo, Der Ming

AU - Kuo, Hsiun Rong

AU - Kuo, Jian Shian

PY - 2011/9/26

Y1 - 2011/9/26

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AB - The use of a refractive index matching (RIM) structure with indium zinc oxide (IZO) transparent conduction layer and SiO2 nanotube (SiO 2-NT) arrays to improve light extraction of vertical structure KOH-etched GaN-based light emitting diodes (VLEDs) is demonstrated. Compared to regular VLED with KOH-roughened surface, it shows considerable gains in light emitted critical angle and light output power by 21.3° and 103% at 350 mA, respectively. These improvements could be attributed to the effectiveness of the IZO/SiO2-NT RIM scheme in ameliorating current crowding and significantly minimizing the total internal reflection effect.

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