Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer

Shui Jinn Wang; Pei Ren Wang; Der Ming Kuo; Hsiun Rong Kuo; Jian Shian Kuo

doi:10.1063/1.3645003

Improved light output of GaN-based vertical light emitting diodes using SiO₂ nanotube arrays and transparent metal oxide current conduction layer

Shui Jinn Wang, Pei Ren Wang, Der Ming Kuo, Hsiun Rong Kuo, Jian Shian Kuo

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The use of a refractive index matching (RIM) structure with indium zinc oxide (IZO) transparent conduction layer and SiO₂ nanotube (SiO ₂-NT) arrays to improve light extraction of vertical structure KOH-etched GaN-based light emitting diodes (VLEDs) is demonstrated. Compared to regular VLED with KOH-roughened surface, it shows considerable gains in light emitted critical angle and light output power by 21.3° and 103% at 350 mA, respectively. These improvements could be attributed to the effectiveness of the IZO/SiO₂-NT RIM scheme in ameliorating current crowding and significantly minimizing the total internal reflection effect.

Original language	English
Article number	131111
Journal	Applied Physics Letters
Volume	99
Issue number	13
DOIs	https://doi.org/10.1063/1.3645003
Publication status	Published - 2011 Sept 26

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3645003

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@article{a2486638f72d4261a7d32088bef4bb24,

title = "Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer",

abstract = "The use of a refractive index matching (RIM) structure with indium zinc oxide (IZO) transparent conduction layer and SiO2 nanotube (SiO 2-NT) arrays to improve light extraction of vertical structure KOH-etched GaN-based light emitting diodes (VLEDs) is demonstrated. Compared to regular VLED with KOH-roughened surface, it shows considerable gains in light emitted critical angle and light output power by 21.3° and 103% at 350 mA, respectively. These improvements could be attributed to the effectiveness of the IZO/SiO2-NT RIM scheme in ameliorating current crowding and significantly minimizing the total internal reflection effect.",

author = "Wang, {Shui Jinn} and Wang, {Pei Ren} and Kuo, {Der Ming} and Kuo, {Hsiun Rong} and Kuo, {Jian Shian}",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China, under Contract Nos. NSC-100-3113-E-006-015, NSC-100-2221-E-006-156-MY2, and NSC-100-2221-E-006-045-MY2.",

year = "2011",

month = sep,

day = "26",

doi = "10.1063/1.3645003",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer

AU - Wang, Shui Jinn

AU - Wang, Pei Ren

AU - Kuo, Der Ming

AU - Kuo, Hsiun Rong

AU - Kuo, Jian Shian

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China, under Contract Nos. NSC-100-3113-E-006-015, NSC-100-2221-E-006-156-MY2, and NSC-100-2221-E-006-045-MY2.

PY - 2011/9/26

Y1 - 2011/9/26

N2 - The use of a refractive index matching (RIM) structure with indium zinc oxide (IZO) transparent conduction layer and SiO2 nanotube (SiO 2-NT) arrays to improve light extraction of vertical structure KOH-etched GaN-based light emitting diodes (VLEDs) is demonstrated. Compared to regular VLED with KOH-roughened surface, it shows considerable gains in light emitted critical angle and light output power by 21.3° and 103% at 350 mA, respectively. These improvements could be attributed to the effectiveness of the IZO/SiO2-NT RIM scheme in ameliorating current crowding and significantly minimizing the total internal reflection effect.

AB - The use of a refractive index matching (RIM) structure with indium zinc oxide (IZO) transparent conduction layer and SiO2 nanotube (SiO 2-NT) arrays to improve light extraction of vertical structure KOH-etched GaN-based light emitting diodes (VLEDs) is demonstrated. Compared to regular VLED with KOH-roughened surface, it shows considerable gains in light emitted critical angle and light output power by 21.3° and 103% at 350 mA, respectively. These improvements could be attributed to the effectiveness of the IZO/SiO2-NT RIM scheme in ameliorating current crowding and significantly minimizing the total internal reflection effect.

UR - http://www.scopus.com/inward/record.url?scp=80053532632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053532632&partnerID=8YFLogxK

U2 - 10.1063/1.3645003

DO - 10.1063/1.3645003

M3 - Article

AN - SCOPUS:80053532632

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131111

ER -

Improved light output of GaN-based vertical light emitting diodes using SiO₂ nanotube arrays and transparent metal oxide current conduction layer

Abstract

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