Improved light-output power of GaN LEDs by selective region activation

Chien Chih Liu; Yuag Hsin Chen; Mau Phon Houng; Yeong Her Wang; Yan Kuin Su; Wen Bin Chen; Shi Ming Chen

doi:10.1109/LPT.2004.826786

Improved light-output power of GaN LEDs by selective region activation

Chien Chih Liu, Yuag Hsin Chen, Mau Phon Houng, Yeong Her Wang, Yan Kuin Su, Wen Bin Chen, Shi Ming Chen

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost. In the SHRR design, the area under the p-pad metal electrode is selectively given a higher resistance, reducing current flow and light generation under the contact. Under constant current testing, the current normally passing through the SHRR region is instead distributed over the visible (i.e., useful) area of the device, resulting in significantly increased light-output power and luminous efficiency.

Original language	English
Pages (from-to)	1444-1446
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2004.826786
Publication status	Published - 2004 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.826786

Cite this

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title = "Improved light-output power of GaN LEDs by selective region activation",

abstract = "A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost. In the SHRR design, the area under the p-pad metal electrode is selectively given a higher resistance, reducing current flow and light generation under the contact. Under constant current testing, the current normally passing through the SHRR region is instead distributed over the visible (i.e., useful) area of the device, resulting in significantly increased light-output power and luminous efficiency.",

author = "Liu, {Chien Chih} and Chen, {Yuag Hsin} and Houng, {Mau Phon} and Wang, {Yeong Her} and Su, {Yan Kuin} and Chen, {Wen Bin} and Chen, {Shi Ming}",

note = "Funding Information: Manuscript received May 30, 2003; revised January 7, 2004. This work was supported by the National Science Council of Taiwan under Contract NSC 91-2215-E-006-020.",

year = "2004",

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doi = "10.1109/LPT.2004.826786",

language = "English",

volume = "16",

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journal = "IEEE Photonics Technology Letters",

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T1 - Improved light-output power of GaN LEDs by selective region activation

AU - Liu, Chien Chih

AU - Chen, Yuag Hsin

AU - Houng, Mau Phon

AU - Wang, Yeong Her

AU - Su, Yan Kuin

AU - Chen, Wen Bin

AU - Chen, Shi Ming

N1 - Funding Information: Manuscript received May 30, 2003; revised January 7, 2004. This work was supported by the National Science Council of Taiwan under Contract NSC 91-2215-E-006-020.

PY - 2004/6

Y1 - 2004/6

N2 - A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost. In the SHRR design, the area under the p-pad metal electrode is selectively given a higher resistance, reducing current flow and light generation under the contact. Under constant current testing, the current normally passing through the SHRR region is instead distributed over the visible (i.e., useful) area of the device, resulting in significantly increased light-output power and luminous efficiency.

AB - A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost. In the SHRR design, the area under the p-pad metal electrode is selectively given a higher resistance, reducing current flow and light generation under the contact. Under constant current testing, the current normally passing through the SHRR region is instead distributed over the visible (i.e., useful) area of the device, resulting in significantly increased light-output power and luminous efficiency.

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Improved light-output power of GaN LEDs by selective region activation

Abstract

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