Improved light-output power of GaN LEDs by selective region activation

Chien Chih Liu, Yuag Hsin Chen, Mau Phon Houng, Yeong Her Wang, Yan Kuin Su, Wen Bin Chen, Shi Ming Chen

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost. In the SHRR design, the area under the p-pad metal electrode is selectively given a higher resistance, reducing current flow and light generation under the contact. Under constant current testing, the current normally passing through the SHRR region is instead distributed over the visible (i.e., useful) area of the device, resulting in significantly increased light-output power and luminous efficiency.

Original languageEnglish
Pages (from-to)1444-1446
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
Publication statusPublished - 2004 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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