Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu, C. C. Lin

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)

Abstract

Mg-doped p-GaN epitaxial layers grown at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800°C. In0.23Ga0.77N/GaN multiquantum well (MQW) light-emitting diodes (LEDs) with such a low 800°C-grown p-GaN cap layer were also fabricated. It was also found that one could lower the LED operation voltage from 3.68 to 3.36 V and enhance the 20 mA LED output power by the 800°C-grown p-GaN cap layer. However, it was also found the leakage current was larger and the lifetime was shorter for the LEDs with the 800°C-grown p-GaN cap layer.

Original languageEnglish
Pages (from-to)10-13
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume112
Issue number1
DOIs
Publication statusPublished - 2004 Sep 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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