Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

C. H. Liu; R. W. Chuang; S. J. Chang; Y. K. Su; L. W. Wu; Chih-Chien Lin

doi:10.1016/j.mseb.2004.05.003

Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

C. H. Liu
, R. W. Chuang
, S. J. Chang
, Y. K. Su
, L. W. Wu
, Chih-Chien Lin

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

Mg-doped p-GaN epitaxial layers grown at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800°C. In_0.23Ga_0.77N/GaN multiquantum well (MQW) light-emitting diodes (LEDs) with such a low 800°C-grown p-GaN cap layer were also fabricated. It was also found that one could lower the LED operation voltage from 3.68 to 3.36 V and enhance the 20 mA LED output power by the 800°C-grown p-GaN cap layer. However, it was also found the leakage current was larger and the lifetime was shorter for the LEDs with the 800°C-grown p-GaN cap layer.

Original language	English
Pages (from-to)	10-13
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	112
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2004.05.003
Publication status	Published - 2004 Sept 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2004.05.003

Cite this

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title = "Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface",

abstract = "Mg-doped p-GaN epitaxial layers grown at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800°C. In0.23Ga0.77N/GaN multiquantum well (MQW) light-emitting diodes (LEDs) with such a low 800°C-grown p-GaN cap layer were also fabricated. It was also found that one could lower the LED operation voltage from 3.68 to 3.36 V and enhance the 20 mA LED output power by the 800°C-grown p-GaN cap layer. However, it was also found the leakage current was larger and the lifetime was shorter for the LEDs with the 800°C-grown p-GaN cap layer.",

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T1 - Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

AU - Liu, C. H.

AU - Chuang, R. W.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Lin, Chih-Chien

PY - 2004/9/15

Y1 - 2004/9/15

N2 - Mg-doped p-GaN epitaxial layers grown at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800°C. In0.23Ga0.77N/GaN multiquantum well (MQW) light-emitting diodes (LEDs) with such a low 800°C-grown p-GaN cap layer were also fabricated. It was also found that one could lower the LED operation voltage from 3.68 to 3.36 V and enhance the 20 mA LED output power by the 800°C-grown p-GaN cap layer. However, it was also found the leakage current was larger and the lifetime was shorter for the LEDs with the 800°C-grown p-GaN cap layer.

AB - Mg-doped p-GaN epitaxial layers grown at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800°C. In0.23Ga0.77N/GaN multiquantum well (MQW) light-emitting diodes (LEDs) with such a low 800°C-grown p-GaN cap layer were also fabricated. It was also found that one could lower the LED operation voltage from 3.68 to 3.36 V and enhance the 20 mA LED output power by the 800°C-grown p-GaN cap layer. However, it was also found the leakage current was larger and the lifetime was shorter for the LEDs with the 800°C-grown p-GaN cap layer.

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JO - Materials Science and Engineering: B

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ER -

Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

Abstract

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