Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

Huan Chung Wang, Huan Fu Su, Quang Ho Luc, Ching-Ting Lee, Heng Tung Hsu, Edward Yi Chang

Research output: Contribution to journalEditorial

Abstract

An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G m ) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

Original languageEnglish
Pages (from-to)S3106-S3109
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number11
DOIs
Publication statusPublished - 2017 Jan 1

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High electron mobility transistors
Millimeter waves
Fabrication
Gates (transistor)
Intermodulation distortion
Transconductance
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Wang, Huan Chung ; Su, Huan Fu ; Luc, Quang Ho ; Lee, Ching-Ting ; Hsu, Heng Tung ; Chang, Edward Yi. / Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication. In: ECS Journal of Solid State Science and Technology. 2017 ; Vol. 6, No. 11. pp. S3106-S3109.
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Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication. / Wang, Huan Chung; Su, Huan Fu; Luc, Quang Ho; Lee, Ching-Ting; Hsu, Heng Tung; Chang, Edward Yi.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 11, 01.01.2017, p. S3106-S3109.

Research output: Contribution to journalEditorial

TY - JOUR

T1 - Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

AU - Wang, Huan Chung

AU - Su, Huan Fu

AU - Luc, Quang Ho

AU - Lee, Ching-Ting

AU - Hsu, Heng Tung

AU - Chang, Edward Yi

PY - 2017/1/1

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N2 - An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G m ) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

AB - An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G m ) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

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