Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

Huan Chung Wang, Huan Fu Su, Quang Ho Luc, Ching Ting Lee, Heng Tung Hsu, Edward Yi Chang

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1 Citation (Scopus)

Abstract

An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

Original languageEnglish
Pages (from-to)S3106-S3109
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number11
DOIs
Publication statusPublished - 2017 Jan 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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