Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

Huan Chung Wang; Huan Fu Su; Quang Ho Luc; Ching Ting Lee; Heng Tung Hsu; Edward Yi Chang

doi:10.1149/2.0251711jss

Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

Huan Chung Wang, Huan Fu Su, Quang Ho Luc, Ching Ting Lee, Heng Tung Hsu, Edward Yi Chang

Department of Photonics

Research output: Contribution to journal › Editorial › peer-review

11 Citations (Scopus)

Abstract

An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G_m) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G_m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

Original language	English
Pages (from-to)	S3106-S3109
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	11
DOIs	https://doi.org/10.1149/2.0251711jss
Publication status	Published - 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.0251711jss

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title = "Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication",

abstract = "An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.",

author = "Wang, {Huan Chung} and Su, {Huan Fu} and Luc, {Quang Ho} and Lee, {Ching Ting} and Hsu, {Heng Tung} and Chang, {Edward Yi}",

note = "Funding Information: This work was supported by the National Chung-Shan Institute of Science & Technology, Taiwan, under grant No. NCSIST-103-V312 (106). Publisher Copyright: {\textcopyright} The Author(s) 2017.",

year = "2017",

doi = "10.1149/2.0251711jss",

language = "English",

volume = "6",

pages = "S3106--S3109",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

AU - Wang, Huan Chung

AU - Su, Huan Fu

AU - Luc, Quang Ho

AU - Lee, Ching Ting

AU - Hsu, Heng Tung

AU - Chang, Edward Yi

N1 - Funding Information: This work was supported by the National Chung-Shan Institute of Science & Technology, Taiwan, under grant No. NCSIST-103-V312 (106). Publisher Copyright: © The Author(s) 2017.

PY - 2017

Y1 - 2017

N2 - An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

AB - An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

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DO - 10.1149/2.0251711jss

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SN - 2162-8769

VL - 6

SP - S3106-S3109

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 11

ER -

Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

Abstract

All Science Journal Classification (ASJC) codes

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