Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

Kuan Wei Lee, Hsien Cheng Lin, Fang Ming Lee, Hou Kuei Huang, Yeong-Her Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain.

Original languageEnglish
Article number203506
JournalApplied Physics Letters
Volume96
Issue number20
DOIs
Publication statusPublished - 2010 May 17

Fingerprint

recesses
high electron mobility transistors
liquid phases
microwaves
metal oxide semiconductors
ionization
frequency response
leakage
capacitance
current density
oxidation
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{d0424a1108ce4261ba54aa03e13a9054,
title = "Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess",
abstract = "The metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain.",
author = "Lee, {Kuan Wei} and Lin, {Hsien Cheng} and Lee, {Fang Ming} and Huang, {Hou Kuei} and Yeong-Her Wang",
year = "2010",
month = "5",
day = "17",
doi = "10.1063/1.3430569",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess. / Lee, Kuan Wei; Lin, Hsien Cheng; Lee, Fang Ming; Huang, Hou Kuei; Wang, Yeong-Her.

In: Applied Physics Letters, Vol. 96, No. 20, 203506, 17.05.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

AU - Lee, Kuan Wei

AU - Lin, Hsien Cheng

AU - Lee, Fang Ming

AU - Huang, Hou Kuei

AU - Wang, Yeong-Her

PY - 2010/5/17

Y1 - 2010/5/17

N2 - The metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain.

AB - The metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain.

UR - http://www.scopus.com/inward/record.url?scp=77953017227&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953017227&partnerID=8YFLogxK

U2 - 10.1063/1.3430569

DO - 10.1063/1.3430569

M3 - Article

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 203506

ER -