Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

Kuan Wei Lee, Hsien Cheng Lin, Fang Ming Lee, Hou Kuei Huang, Yeong Her Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain.

Original languageEnglish
Article number203506
JournalApplied Physics Letters
Volume96
Issue number20
DOIs
Publication statusPublished - 2010 May 17

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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