Improved mobilities and concentrations in double quantum well InGaAs GaAs pseudomorphic HFETs using multi-coupled δ-doped GaAs

M. J. Kao, W. C. Hsu, H. M. Shieh, T. Y. Lin

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.

Original languageEnglish
Pages (from-to)1171-1173
Number of pages3
JournalSolid State Electronics
Volume38
Issue number6
DOIs
Publication statusPublished - 1995 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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