Abstract
In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.
| Original language | English |
|---|---|
| Pages (from-to) | 1171-1173 |
| Number of pages | 3 |
| Journal | Solid State Electronics |
| Volume | 38 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1995 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Improved mobilities and concentrations in double quantum well InGaAs GaAs pseudomorphic HFETs using multi-coupled δ-doped GaAs. / Kao, M. J.; Hsu, Wei-Chou; Shieh, H. M.; Lin, T. Y.
In: Solid State Electronics, Vol. 38, No. 6, 01.01.1995, p. 1171-1173.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improved mobilities and concentrations in double quantum well InGaAs GaAs pseudomorphic HFETs using multi-coupled δ-doped GaAs
AU - Kao, M. J.
AU - Hsu, Wei-Chou
AU - Shieh, H. M.
AU - Lin, T. Y.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.
AB - In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.
UR - http://www.scopus.com/inward/record.url?scp=11644278772&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=11644278772&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(94)00226-6
DO - 10.1016/0038-1101(94)00226-6
M3 - Article
AN - SCOPUS:11644278772
VL - 38
SP - 1171
EP - 1173
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 6
ER -