In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry