Improved mobilities and concentrations in double quantum well InGaAs GaAs pseudomorphic HFETs using multi-coupled δ-doped GaAs

M. J. Kao, Wei-Chou Hsu, H. M. Shieh, T. Y. Lin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.

Original languageEnglish
Pages (from-to)1171-1173
Number of pages3
JournalSolid State Electronics
Volume38
Issue number6
DOIs
Publication statusPublished - 1995 Jan 1

Fingerprint

Semiconductor quantum wells
quantum wells
Transconductance
transconductance
Carrier concentration
Current density
current density
saturation
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Improved mobilities and concentrations in double quantum well InGaAs GaAs pseudomorphic HFETs using multi-coupled δ-doped GaAs",
abstract = "In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.",
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Improved mobilities and concentrations in double quantum well InGaAs GaAs pseudomorphic HFETs using multi-coupled δ-doped GaAs. / Kao, M. J.; Hsu, Wei-Chou; Shieh, H. M.; Lin, T. Y.

In: Solid State Electronics, Vol. 38, No. 6, 01.01.1995, p. 1171-1173.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved mobilities and concentrations in double quantum well InGaAs GaAs pseudomorphic HFETs using multi-coupled δ-doped GaAs

AU - Kao, M. J.

AU - Hsu, Wei-Chou

AU - Shieh, H. M.

AU - Lin, T. Y.

PY - 1995/1/1

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N2 - In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.

AB - In this work, we report the improvement of mobilities and concentrations using multi-coupled Si-°-doped GaAs layers in double quantum well (DQW) GaAs/InGaAs/GaAs pseudomorphic hetero-structures. The improved mobilities and sheet carrier densities are 5200 (21,000) cm2/Vs and 7.6 (5.0) × 1012 cm-2 at 300 (77) K, respectively, which are significantly superior to those of single quantum well structures. The transconductance and saturation current density are as high as 240 mS/mm and 750 mA/mm, respectively, at 300 K with a gate length of 1.5 μm.

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