Improved negative bias stress stability of IZO thin film transistors via post-vacuum annealing of solution method

Bo Yuan Su, Sheng Yuan Chu, Yung Der Juang, Han Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Post-vacuum-annealed amorphous indium zinc oxide (a-IZO) nanostructure thin-film transistors (TFTs) were fabricated by a simple solution-based method. The number of oxygen-related defects in the IZO films was reduced by post-vacuum annealing, as revealed by X-ray photoelectron spectroscopy results. The refractive index studies of as-prepared films indicate the reduced film surface porosity. With the optimal post-vacuum treatment temperature of 250°C, the field-effect mobility and subthreshold slope (S) of TFTs (2.81 cm2/V s and 0.72 V/dec, respectively) improved compared to those of as-prepared IZO TFTs (0.38 cm2/V s and 3.79 V/dec, respectively). The negative bias stress tests of the vacuum-annealed devices was enhanced relatively high electrical stability due to fewer oxygen deficiencies in the IZO films.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume2
Issue number7
DOIs
Publication statusPublished - 2013 Nov 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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