Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Wen-Chau Liu; Kuo Hui Yu; Rong Chau Liu; Kun Wei Lin; Chin Chuan Cheng; Kuan Po Lin; Chih Hung Yen; Cheng Zu Wu

doi:10.1063/1.1394720

Improved n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Wen-Chau Liu, Kuo Hui Yu, Rong Chau Liu, Kun Wei Lin, Chin Chuan Cheng, Kuan Po Lin, Chih Hung Yen, Cheng Zu Wu

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

A n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs camel-like gate structure has been applied to fabricate high-performance transistors. The studied heterostructure field-effect transistor exhibits a large barrier height, high breakdown voltage, low leakage current, and good temperature-dependent characteristics. Experimentally, for a 1×100 μm² device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. In addition, the high drain-source operation voltage over 20 V with low leakage current is obtained.

Original language	English
Pages (from-to)	967-969
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	7
DOIs	https://doi.org/10.1063/1.1394720
Publication status	Published - 2001 Aug 13

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1394720

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Liu, W-C., Yu, K. H., Liu, R. C., Lin, K. W., Cheng, C. C., Lin, K. P., Yen, C. H., & Wu, C. Z. (2001). Improved n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications. Applied Physics Letters, 79(7), 967-969. https://doi.org/10.1063/1.1394720

@article{86fd8315f78a4625b9b84697455e4ec3,

title = "Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications",

abstract = "A n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure has been applied to fabricate high-performance transistors. The studied heterostructure field-effect transistor exhibits a large barrier height, high breakdown voltage, low leakage current, and good temperature-dependent characteristics. Experimentally, for a 1×100 μm2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. In addition, the high drain-source operation voltage over 20 V with low leakage current is obtained.",

author = "Wen-Chau Liu and Yu, {Kuo Hui} and Liu, {Rong Chau} and Lin, {Kun Wei} and Cheng, {Chin Chuan} and Lin, {Kuan Po} and Yen, {Chih Hung} and Wu, {Cheng Zu}",

year = "2001",

month = aug,

day = "13",

doi = "10.1063/1.1394720",

language = "English",

volume = "79",

pages = "967--969",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

Improved n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications. / Liu, Wen-Chau; Yu, Kuo Hui; Liu, Rong Chau; Lin, Kun Wei; Cheng, Chin Chuan; Lin, Kuan Po; Yen, Chih Hung; Wu, Cheng Zu.

In: Applied Physics Letters, Vol. 79, No. 7, 13.08.2001, p. 967-969.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

AU - Liu, Wen-Chau

AU - Yu, Kuo Hui

AU - Liu, Rong Chau

AU - Lin, Kun Wei

AU - Cheng, Chin Chuan

AU - Lin, Kuan Po

AU - Yen, Chih Hung

AU - Wu, Cheng Zu

PY - 2001/8/13

Y1 - 2001/8/13

N2 - A n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure has been applied to fabricate high-performance transistors. The studied heterostructure field-effect transistor exhibits a large barrier height, high breakdown voltage, low leakage current, and good temperature-dependent characteristics. Experimentally, for a 1×100 μm2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. In addition, the high drain-source operation voltage over 20 V with low leakage current is obtained.

AB - A n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure has been applied to fabricate high-performance transistors. The studied heterostructure field-effect transistor exhibits a large barrier height, high breakdown voltage, low leakage current, and good temperature-dependent characteristics. Experimentally, for a 1×100 μm2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. In addition, the high drain-source operation voltage over 20 V with low leakage current is obtained.

UR - http://www.scopus.com/inward/record.url?scp=0035855096&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035855096&partnerID=8YFLogxK

U2 - 10.1063/1.1394720

DO - 10.1063/1.1394720

M3 - Article

AN - SCOPUS:0035855096

VL - 79

SP - 967

EP - 969

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -