A n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure has been applied to fabricate high-performance transistors. The studied heterostructure field-effect transistor exhibits a large barrier height, high breakdown voltage, low leakage current, and good temperature-dependent characteristics. Experimentally, for a 1×100 μm2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. In addition, the high drain-source operation voltage over 20 V with low leakage current is obtained.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)