Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Wen-Chau Liu, Kuo Hui Yu, Rong Chau Liu, Kun Wei Lin, Chin Chuan Cheng, Kuan Po Lin, Chih Hung Yen, Cheng Zu Wu

Research output: Contribution to journalArticle

4 Citations (Scopus)


A n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure has been applied to fabricate high-performance transistors. The studied heterostructure field-effect transistor exhibits a large barrier height, high breakdown voltage, low leakage current, and good temperature-dependent characteristics. Experimentally, for a 1×100 μm2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. In addition, the high drain-source operation voltage over 20 V with low leakage current is obtained.

Original languageEnglish
Pages (from-to)967-969
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2001 Aug 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Improved n<sup>+</sup>-GaAs/p<sup>+</sup>-In<sub>0.49</sub>Ga<sub>0.51</sub>P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications'. Together they form a unique fingerprint.

  • Cite this