Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

Le Trung Hieu; Heng Tung Hsu; Debashis Panda; Ching Ting Lee; Chun Hsiung Lin; Edward Yi Chang

doi:10.1149/2162-8777/acbb27

Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

Le Trung Hieu, Heng Tung Hsu, Debashis Panda, Ching Ting Lee, Chun Hsiung Lin, Edward Yi Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

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Abstract

An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (V_knee) and on-resistance (R_ON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10⁻⁷ A mm⁻¹, and the cutoff frequency (f _t) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.

Original language	English
Article number	025001
Journal	ECS Journal of Solid State Science and Technology
Volume	12
Issue number	2
DOIs	https://doi.org/10.1149/2162-8777/acbb27
Publication status	Published - 2023 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2162-8777/acbb27

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title = "Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator",

abstract = "An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (Vknee) and on-resistance (RON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10−7 A mm−1, and the cutoff frequency (f t ) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.",

author = "{Trung Hieu}, Le and Hsu, {Heng Tung} and Debashis Panda and Lee, {Ching Ting} and Lin, {Chun Hsiung} and Chang, {Edward Yi}",

note = "Funding Information: This work was financially supported by the “Center for the Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE), Taiwan. The work is also supported in part by the Ministry of Science and Technology, Taiwan, under Grant No. NSTC-110-2622-8-A49-008-SB, NSTC-111-2622-8-A49-018-SB and NSTC 111-2634-F-A49-008 along with National Chung-Shan Institute of Science and Technology NCSIST-404-V407(111). Publisher Copyright: {\textcopyright} 2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.",

year = "2023",

month = feb,

doi = "10.1149/2162-8777/acbb27",

language = "English",

volume = "12",

journal = "ECS Journal of Solid State Science and Technology",

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T1 - Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

AU - Trung Hieu, Le

AU - Hsu, Heng Tung

AU - Panda, Debashis

AU - Lee, Ching Ting

AU - Lin, Chun Hsiung

AU - Chang, Edward Yi

N1 - Funding Information: This work was financially supported by the “Center for the Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE), Taiwan. The work is also supported in part by the Ministry of Science and Technology, Taiwan, under Grant No. NSTC-110-2622-8-A49-008-SB, NSTC-111-2622-8-A49-018-SB and NSTC 111-2634-F-A49-008 along with National Chung-Shan Institute of Science and Technology NCSIST-404-V407(111). Publisher Copyright: © 2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.

PY - 2023/2

Y1 - 2023/2

N2 - An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (Vknee) and on-resistance (RON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10−7 A mm−1, and the cutoff frequency (f t ) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.

AB - An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (Vknee) and on-resistance (RON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10−7 A mm−1, and the cutoff frequency (f t ) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.

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Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

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