Abstract
In this paper, air gaps were embedded in the n-GaN layer to improve light output power of InGaN-based light-emitting diodes (LEDs). Si ions +28 were implanted on the n-GaN surface, causing a lattice constant disorder. Therefore, the GaN grown on the Si-implanted areas had a lower growth rate than the implantation-free regions. Without using a dielectric thin film, lateral epitaxial overgrowth technique was used to form air gaps above the implanted regions and below the active layers of InGaN LEDs. We proposed the growth mechanisms of GaN layer on the Si-implanted GaN templates and characterized the InGaN-based LEDs with embedded air gaps array. With a 20-mA current injection, experimental results indicate that light output power (LOP) of the proposed LEDs was enhanced by 36%, compared with those of the conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/gap interfaces to increase the effective light escape cone in the LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 μ, the Lop could be enhanced over 70%.
| Original language | English |
|---|---|
| Article number | 6203433 |
| Pages (from-to) | 1004-1009 |
| Number of pages | 6 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 48 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2012 Jun 6 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
}
Improved output power of InGaN LEDs by lateral overgrowth on Si-implanted n-GaN surface to form air gaps. / Tu, Shang Ju; Lee, Ming Lun; Yeh, Yu Hsiang; Huang, Feng Wen; Chen, Po Cheng; Lai, Wei-Chi; Chen, Chung Wei; Chi, Gou Chung; Sheu, Jinn-Kong.
In: IEEE Journal of Quantum Electronics, Vol. 48, No. 8, 6203433, 06.06.2012, p. 1004-1009.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improved output power of InGaN LEDs by lateral overgrowth on Si-implanted n-GaN surface to form air gaps
AU - Tu, Shang Ju
AU - Lee, Ming Lun
AU - Yeh, Yu Hsiang
AU - Huang, Feng Wen
AU - Chen, Po Cheng
AU - Lai, Wei-Chi
AU - Chen, Chung Wei
AU - Chi, Gou Chung
AU - Sheu, Jinn-Kong
PY - 2012/6/6
Y1 - 2012/6/6
N2 - In this paper, air gaps were embedded in the n-GaN layer to improve light output power of InGaN-based light-emitting diodes (LEDs). Si ions +28 were implanted on the n-GaN surface, causing a lattice constant disorder. Therefore, the GaN grown on the Si-implanted areas had a lower growth rate than the implantation-free regions. Without using a dielectric thin film, lateral epitaxial overgrowth technique was used to form air gaps above the implanted regions and below the active layers of InGaN LEDs. We proposed the growth mechanisms of GaN layer on the Si-implanted GaN templates and characterized the InGaN-based LEDs with embedded air gaps array. With a 20-mA current injection, experimental results indicate that light output power (LOP) of the proposed LEDs was enhanced by 36%, compared with those of the conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/gap interfaces to increase the effective light escape cone in the LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 μ, the Lop could be enhanced over 70%.
AB - In this paper, air gaps were embedded in the n-GaN layer to improve light output power of InGaN-based light-emitting diodes (LEDs). Si ions +28 were implanted on the n-GaN surface, causing a lattice constant disorder. Therefore, the GaN grown on the Si-implanted areas had a lower growth rate than the implantation-free regions. Without using a dielectric thin film, lateral epitaxial overgrowth technique was used to form air gaps above the implanted regions and below the active layers of InGaN LEDs. We proposed the growth mechanisms of GaN layer on the Si-implanted GaN templates and characterized the InGaN-based LEDs with embedded air gaps array. With a 20-mA current injection, experimental results indicate that light output power (LOP) of the proposed LEDs was enhanced by 36%, compared with those of the conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/gap interfaces to increase the effective light escape cone in the LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 μ, the Lop could be enhanced over 70%.
UR - http://www.scopus.com/inward/record.url?scp=84861745783&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861745783&partnerID=8YFLogxK
U2 - 10.1109/JQE.2012.2197733
DO - 10.1109/JQE.2012.2197733
M3 - Article
VL - 48
SP - 1004
EP - 1009
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 8
M1 - 6203433
ER -